Blue-green laser diode
AssigneeMinnesota Mining and Manufacturing Company
InventorsMichael A. Haase, Hwa Cheng, James M. DePuydt, Jun Qiu
Life of this patent
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Abstract
A II-VI compound semiconductor laser diode includes a N-type GaAs substrate, a first cladding layer of N-type ZnSSe overlaying the substrate, a first guiding layer of N-type ZnSe semiconductor overlaying the first cladding layer. A quantum well layer of strained CdZnSe semiconductor overlaying the first guiding layer, a second guiding layer of p-type ZnSe semiconductor overlaying the quantum well layer, and a second cladding layer of p-type ZnSSe semiconductor overlaying the second guiding layer.
Claims34
A II-VI compound semiconductor laser diode, including:
- a single crystal semiconductor substrate of a first conductivity type;
- a first cladding layer of II-VI semiconductor of a first conductivity type overlaying the substrate;
- a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the first cladding layer;
- an active layer of II-VI semiconductor overlaying the first guiding layer;
- a second guiding layer of II-VI semiconductor of a second conductivity type overlaying the active layer;
- and
- a second cladding layer of II-VI semiconductor of the second conductivity type overlaying the second guiding layer.
A laser diode, including:
- a single crystal semiconductor substrate of a first conductivity type;
- a first ZnSSe cladding layer of a first conductivity type overlaying the substrate;
- a first ZnSe guiding layer of the first conductivity type overlaying the first cladding layer;
- a pseudomorphic CdZnSe quantum well active layer overlaying the first guiding layer;
- a second ZnSe guiding layer of a second conductivity type overlaying the active layer;
- a second ZnSSe cladding layer of the second conductivity type overlaying the second guiding layer;
- and
- first and second electrodes for making electrical contact to the laser diode.
A II-VI compound semiconductor laser diode formed from overlaying layers of material, including:
- a first guiding layer of II-VI semiconductor of a first conductivity type;
- a second guiding layer of II-VI semiconductor of a second conductivity type adjacent the first guiding layer, the first and second guiding layers forming a pn junction;
- a quantum well active layer of II-VI semiconductor between the first and second guiding layers;
- a single crystal semiconductor substrate of a first conductivity type opposite the first guiding layer from the second guiding layer;
- a first electrode opposite the substrate from the first guiding layer;
- and
- a second electrode opposite the second guiding layer from the first guiding layer.
A laser diode, including:
- a single crystal semiconductor substrate of a first conductivity type;
- a first CdZnS cladding layer of a first conductivity type overlaying the substrate;
- a first ZnSe guiding layer of the first conductivity type overlaying the first cladding layer;
- a pseudomorphic CdZnSe quantum well active layer overlaying the first guiding layer;
- a second ZnSe guiding layer of a second conductivity type overlaying the active layer;
- a second CdZnS cladding layer of the second conductivity type overlaying the second guiding layer;
- and
- first and second electrodes for making electrical contact to the laser diode.
Dependencies are inferred from the claim text.