H01S 5/2031
Characterized by special waveguide layers
Official title: {characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities}
H01S5/2031 (Characterized by special waveguide layers) appears on 277 US grants and 307 published applications in this corpus.
Search patents in H01S- Granted patents
- 277
- Published applications
- 307
- Assignees
- 148
- Inventors
- 618
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 2 | 2 |
| 2002 | 3 | 1 |
| 2003 | 5 | 1 |
| 2004 | 2 | 6 |
| 2005 | 1 | 1 |
| 2006 | 4 | 1 |
| 2007 | 0 | 4 |
| 2008 | 1 | 1 |
| 2009 | 2 | 1 |
| 2010 | 3 | 5 |
| 2011 | 1 | 22 |
| 2012 | 15 | 18 |
| 2013 | 15 | 22 |
| 2014 | 23 | 11 |
| 2015 | 25 | 21 |
| 2016 | 25 | 13 |
| 2017 | 18 | 10 |
| 2018 | 16 | 11 |
| 2019 | 23 | 18 |
| 2020 | 16 | 18 |
| 2021 | 14 | 19 |
| 2022 | 13 | 20 |
| 2023 | 16 | 27 |
| 2024 | 12 | 19 |
| 2025 | 9 | 22 |
| 2026 | 11 | 13 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Inverted slab-coupled optical waveguide8 Sep 2026US 12,731,964 B2Cisco Technology, Inc.
- Quantum cascade laser element, quantum cascade laser device, and method for manufacturing quantum cascade laser element25 Aug 2026US 12,719,240 B2Hamamatsu Photonics K.K.
- Strain-engineered cladding layer for optimized active region strain and improved laser diode performance19 May 2026US 12,633,725 B2nLIGHT, Inc.
- Semiconductor optical device19 May 2026US 12,633,727 B2NTT, Inc.
- Laser comprising a distributed bragg mirror and production method31 Mar 2026US 12,592,543 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor device1 Oct 2026US 2026/0302718 A1NTT, Inc.
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Two-dimensional grating surface-emitting laser ("2d-grsel")20 Aug 2026US 2026/0246230 A1
- Surface emitting laser devices and methods for manufacturing same30 Jul 2026US 2026/0221722 A1Vector Photonics Limited
- Edge-emitting semiconductor laser, method of manufacturing a plurality of edge-emitting semiconductor lasers, laser component and method of manufacturing a laser component23 Jul 2026US 2026/0213496 A1ams-OSRAM International GmbH
Most cited
By later US patents
- Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm190US 8,242,522 B1Soraa, Inc. · 2012
- Optical device structure using GaN substrates and growth structures for laser applications of emissions of 500 nm and greater189US 8,126,024 B1Soraa, Inc. · 2012
- Optical device structure using GaN substrates and growth structures for laser applications189US 8,254,425 B1Soraa, Inc. · 2012
- Optical device structure using GaN substrates and growth structures for laser applications184US 8,294,179 B1Soraa, Inc. · 2012
- Method and system for providing bidirectional light sources with broad spectrum140US 8,451,876 B1Soraa, Inc. · 2013