Optical device structure using GaN substrates and growth structures for laser applications

An optical device comprising:

• a gallium nitride substrate member having a semipolar or nonpolar crystalline surface region;
• an n-type GaN cladding layer overlying the surface region, the n-type GaN cladding layer having a thickness from 100 nm to 3000 nm with a silicon doping level of 5E17 to 5E18 cm-3;
• an n-side SCH layer overlying the n-type GaN cladding layer, the n-side SCH layer comprised of InGaN with molar fraction of indium of between 3% and 5% and having thickness from 50 to 65 nm;
• a multiple quantum well active region overlying the n-side SCH layer, the multiple quantum well active region comprised of five 4.5 to 5.5 nm InGaN quantum wells separated by six 4.5 to 5.5 nm GaN barriers;
• a p-side SCH layer overlying the multiple quantum well active region, the p-side SCH layer comprised of InGaN with a molar fraction of indium of between 3% and 5% and having a thickness from 50 nm to 65 nm;
• an electron blocking layer overlying the p-side SCH layer, the electron blocking layer comprised of AlGaN with a molar fraction of aluminum of between 15% and 22% and having a thickness from 10 nm to 15 nm and doped with magnesium;
• a p-GaN cladding layer overlying the electronic blocking layer, the p-type GaN cladding layer having a thickness from 400 nm to 1000 nm with a magnesium doping level of 5E17 cm-3 to 1E19 cm-3;
• a p++-GaN contact layer with a thickness from 20 nm to 40 nm with a magnesium doping level of 1E20 cm-3 to 1E21 cm-3;
• a first cleaved m-face facet provided on the first end of the laser stripe region;
• and
• a second cleaved m-face facet provided on the second end of the laser stripe region.