H01S 5/2022
Absorbing region or layer parallel to the active layer
Official title: {Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes}
H01S5/2022 (Absorbing region or layer parallel to the active layer) appears on 115 US grants and 113 published applications in this corpus.
Search patents in H01S- Granted patents
- 115
- Published applications
- 113
- Assignees
- 72
- Inventors
- 237
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 3 | 0 |
| 1999 | 2 | 0 |
| 2000 | 5 | 0 |
| 2001 | 1 | 0 |
| 2002 | 3 | 3 |
| 2003 | 1 | 2 |
| 2004 | 3 | 6 |
| 2005 | 6 | 13 |
| 2006 | 4 | 10 |
| 2007 | 7 | 7 |
| 2008 | 9 | 5 |
| 2009 | 6 | 3 |
| 2010 | 5 | 6 |
| 2011 | 3 | 7 |
| 2012 | 4 | 3 |
| 2013 | 2 | 3 |
| 2014 | 7 | 4 |
| 2015 | 4 | 3 |
| 2016 | 4 | 2 |
| 2017 | 2 | 1 |
| 2018 | 2 | 6 |
| 2019 | 3 | 3 |
| 2020 | 4 | 2 |
| 2021 | 4 | 5 |
| 2022 | 3 | 7 |
| 2023 | 3 | 6 |
| 2024 | 4 | 1 |
| 2025 | 3 | 3 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor laser structure for higher-order mode suppression25 Aug 2026US 12,719,234 B2FreeSpace Photonics, Inc.
- VCSEL with increased wavelength dependence on driving current21 Apr 2026US 12,609,508 B2Trumpf Photonic Components GmbH
- Semiconductor laser and lidar system comprising the semiconductor laser4 Nov 2025US 12,463,403 B2ams-OSRAM International GmbH
- Light emitting element15 Jul 2025US 12,362,540 B2Sony Corporation
- Edge-emitting semiconductor laser diode and method for producing a plurality of edge-emitting semiconductor laser diodes25 Mar 2025US 12,261,409 B2Osram Opto Semiconductors Gmb
- Two-dimensional periodically index-coupled fabry perot laser ("2d pic-fl")27 Aug 2026US 2026/0254200 A1
- Two-dimensional grating surface-emitting laser ("2d-grsel")20 Aug 2026US 2026/0246230 A1
- Semiconductor laser device20 Nov 2025US 2025/0357730 A1Ushio Denki Kabushiki Kaisha
- Edge-emitting semiconductor laser diode5 Jun 2025US 2025/0183618 A1ams-OSRAM International GmbH
- Light-Emitting Device13 Mar 2025US 2025/0087969 A1Nippon Telegraph and Telephone Corporation
Most cited
By later US patents
- Method and apparatus for mode locking of external cavity semiconductor lasers with saturable Bragg reflectors71US 6,449,301 B1The Regents of the University of California · 2002
- Semiconductor light emitter50US 5,537,433 ASharp Kabushiki Kaisha · 1996
- Optically-pumped multiple-quantum well active region with improved distribution of optical pumping power34US 6,859,481 B2Applied Optoelectronics, Inc. · 2005
- Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation32US 5,850,411 ASDL, Inc. · 1998
- Nitride-based semiconductor light-emitting device and method of fabricating the same25US 6,977,953 B2Sanyo Electric Co., Ltd. · 2005