Semiconductor laser and lidar system comprising the semiconductor laser

A semiconductor laser comprising

• a semiconductor layer arrangement having an active zone for generating radiation,
• a first resonator mirror, a second resonator mirror and a resonator arranged between the first and second resonator mirrors, said resonator extending in a direction parallel to a first main surface of the semiconductor layer arrangement, and
• a first wavelength-selective absorption element arranged between the semiconductor layer arrangement and the first resonator mirror,
• wherein the first wavelength-selective absorption element has an absorber layer arranged at a position corresponding to the position of a node of the electric field strength at a target wavelength,
• wherein an amount of radiation absorbed by the absorber layer is based on a temperature of the semiconductor layer, and
• the first wavelength-selective absorption element furthermore has a transparent dielectric layer between the first resonator mirror and the absorber layer, wherein the transparent dielectric layer is dimensioned in such a way that a node of a standing wave that forms with the target wavelength is arranged in the absorber layer, wherein a plane of the transparent dielectric layer and of the absorber layer extends perpendicular to a light propagation direction.