Edge-emitting semiconductor laser diode

Abstract

The invention relates to an edge-emitting semiconductor laser diode including a substrate having a first main face and a second main face opposite the first main face, an epitaxial semiconductor layer stack on the first main face of the substrate, wherein the epitaxial semiconductor layer stack includes an active layer for generating electromagnetic radiation, a matching layer arranged on the second main face of the substrate, and an absorption layer applied directly to the matching layer and configured to at least partially absorb the electromagnetic radiation, wherein the substrate and the matching layer are transparent to electromagnetic radiation generated during operation, and the matching layer is configured to increase the absorption of electromagnetic radiation in the absorption layer.

Dependencies are inferred from the claim text.