Edge-emitting semiconductor laser diode and method for producing a plurality of edge-emitting semiconductor laser diodes
AssigneeOsram Opto Semiconductors Gmb
InventorsSven Gerhard, Bernhard Stojetz
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Abstract
The invention relates to an edge-emitting semiconductor laser diode, having: —a semiconductor layer sequence, which comprises a bottom surface, a ridge waveguide on a top surface facing away from the bottom surface, and a side surface which is arranged transverse to the top surface, and —a first recess, which extends from the bottom surface to the top surface, wherein —a first region of the semiconductor layer sequence is removed from the side surface in the region of the first recess. The invention further relates to a method for producing a plurality of edge-emitting semiconductor laser diodes.
Claims16
An edge emitting semiconductor laser diode comprising:
- a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
- a first cutout extending from the bottom surface toward the top surface, wherein
- a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
- in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
- a filling material is arranged in the first cutout,
- the filling material comprises a radiation-absorbing material or a radiation-reflecting material, and
- the filling material is electrically insulating.
An edge emitting semiconductor laser diode comprising:
- a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
- a first cutout extending from the bottom surface toward the top surface, wherein
- a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
- in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
- a filling material is arranged in the first cutout,
- the filling material comprises a radiation-absorbing material or a radiation-reflecting material, and
- there is arranged in the first cutout at least one sensor element configured to detect at least one of the following variables:
- electromagnetic radiation, electrical resistance, mechanical force, temperature.
An edge emitting semiconductor laser diode comprising:
- a semiconductor layer sequence comprising a bottom surface, a ridge waveguide at a top surface facing away from the bottom surface, and a side surface arranged transversely with respect to the top surface, and
- a first cutout extending from the bottom surface toward the top surface, wherein
- a first region of the semiconductor layer sequence is removed from the side surface in the region of the first cutout,
- in plan view the first cutout does not overlap the ridge waveguide in lateral directions,
- a filling material is arranged in the first cutout,
- the filling material comprises a radiation-absorbing material or a radiation-reflecting material,
- a third cutout extends from the bottom surface toward the top surface of the semiconductor layer sequence, and
- the third cutout is laterally completely surrounded by a material of the semiconductor layer sequence.
Dependencies are inferred from the claim text.