Light-Emitting Device

Abstract

A light-emitting device includes a waveguide-type light-emitting element formed on a cladding layer, a core formed on the cladding layer and constituting a port opposite to an output port of the light-emitting element, and a light absorption layer formed on the core in contact therewith. The core may be composed of a III-V compound semiconductor such as InP. The core is composed of a III-V compound semiconductor capable of guiding (transmitting) light (laser light) output from the light-emitting element. The light absorption layer is composed of a III-V compound semiconductor having a refractive index higher than that of the core, such as InGaAs. The III-V compound semiconductor having a higher refractive index has an absorption coefficient for light (light output from the light-emitting element) transmitted through the core.

Dependencies are inferred from the claim text.