H01S 5/18369
Based on dielectric materials
Official title: {based on dielectric materials}
H01S5/18369 (Based on dielectric materials) appears on 623 US grants and 654 published applications in this corpus.
Search patents in H01S- Granted patents
- 623
- Published applications
- 654
- Assignees
- 231
- Inventors
- 958
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 3 | 0 |
| 1991 | 4 | 0 |
| 1992 | 2 | 0 |
| 1993 | 9 | 0 |
| 1994 | 7 | 0 |
| 1995 | 4 | 0 |
| 1996 | 6 | 0 |
| 1997 | 8 | 0 |
| 1998 | 20 | 0 |
| 1999 | 16 | 0 |
| 2000 | 15 | 0 |
| 2001 | 15 | 6 |
| 2002 | 25 | 33 |
| 2003 | 23 | 21 |
| 2004 | 34 | 41 |
| 2005 | 31 | 29 |
| 2006 | 17 | 24 |
| 2007 | 18 | 24 |
| 2008 | 17 | 27 |
| 2009 | 16 | 26 |
| 2010 | 31 | 24 |
| 2011 | 23 | 20 |
| 2012 | 18 | 14 |
| 2013 | 13 | 17 |
| 2014 | 17 | 17 |
| 2015 | 18 | 20 |
| 2016 | 17 | 15 |
| 2017 | 20 | 19 |
| 2018 | 19 | 29 |
| 2019 | 29 | 29 |
| 2020 | 21 | 30 |
| 2021 | 20 | 31 |
| 2022 | 23 | 23 |
| 2023 | 12 | 34 |
| 2024 | 16 | 33 |
| 2025 | 17 | 33 |
| 2026 | 16 | 35 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Manufacturing method of vertical cavity surface emitting laser6 Oct 2026US 12,756,159 B2Enkris Semiconductor, Inc.
- Light emitting element29 Sep 2026US 12,749,868 B2Sony Group Corporation
- Spontaneous and stimulated emission devices based on relaxed III-nitride materials30 Jun 2026US 12,671,232 B2Opnovix Corp.
- Optoelectronic semiconductor component with individually controllable contact elements, and method for producing the optoelectronic semiconductor component9 Jun 2026US 12,651,887 B2OSRAM Opto Semiconductors GmbH
- Surface emitting laser apparatus and method for manufacturing the same19 May 2026US 12,633,723 B2Hlj Technology Co., Ltd.
- Light emitting device and method for manufacturing the same8 Oct 2026US 2026/0312364 A1Sony Group Corporation
- Single photon source device1 Oct 2026US 2026/0302732 A1Institute of Science Tokyo
- Metasurface enabled compact chiral-vertical cavity surface emitting laser10 Sep 2026US 2026/0269570 A1ams-OSRAM International GmbH
- Surface emitting laser and ranging device10 Sep 2026US 2026/0269571 A1Sony Group Corporation
- Surface light-emitting device10 Sep 2026US 2026/0269572 A1Sony Group Corporation
Most cited
By later US patents
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003
- Blue vertical cavity surface emitting laser248US 6,160,833 AXerox Corporation · 2000
- Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same181US 6,597,490 B2CoreTek, Inc. · 2003
- Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff174US 6,455,340 B1Xerox Corporation · 2002
- Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser171US 6,185,241 B2Xerox Corporation · 2001