H01S 5/18372
By native oxidation
Official title: {by native oxidation}
H01S5/18372 (By native oxidation) appears on 83 US grants and 51 published applications in this corpus.
Search patents in H01S- Granted patents
- 83
- Published applications
- 51
- Assignees
- 39
- Inventors
- 115
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 3 | 0 |
| 2001 | 5 | 1 |
| 2002 | 11 | 6 |
| 2003 | 2 | 2 |
| 2004 | 3 | 6 |
| 2005 | 1 | 2 |
| 2006 | 4 | 1 |
| 2007 | 3 | 0 |
| 2008 | 3 | 0 |
| 2009 | 1 | 4 |
| 2010 | 1 | 2 |
| 2011 | 5 | 1 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 2 |
| 2015 | 0 | 4 |
| 2016 | 5 | 5 |
| 2017 | 6 | 2 |
| 2018 | 1 | 1 |
| 2019 | 3 | 2 |
| 2020 | 2 | 2 |
| 2021 | 1 | 1 |
| 2022 | 1 | 2 |
| 2023 | 2 | 0 |
| 2024 | 2 | 3 |
| 2025 | 1 | 1 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for manufacturing a distributed Bragg reflector for 1550 nm vertical-cavity surface-emitting laser30 Dec 2025US 12,512,646 B2Well & Fortune Tech. LLC
- Semiconductor integrated circuit and methodology for making same24 Sep 2024US 12,100,930 B2
- Vertical-cavity surface-emitting laser and method for forming the same17 Sep 2024US 12,095,231 B2Win Semiconductors Corp.
- Semiconductor integrated circuit and methodology for making same24 Oct 2023US 11,799,268 B2
- Vertical-cavity surface-emitting laser with a tunnel junction28 Mar 2023US 11,616,343 B2Lumentum Operations LLC
- Method for manufacturing a distributed bragg reflector for 1550 nm vertical-cavity surface-emitting laser12 Feb 2026US 2026/0045770 A1Well & Fortune Tech. LLC
- Hcg tunable vcsel with fully oxidized bottom dbr (gaas based vcsel)8 May 2025US 2025/0149859 A1Bandwidth 10, LTD.
- Method for manufacturing a distributed bragg reflector for 1550 nm vertical-cavity surface-emitting laser2 May 2024US 2024/0146028 A1Well & Fortune Tech. LLC
- High-Speed Vertical Cavity Surface Emitting Laser, Electronic Device with the Same and Manufacturing Method Thereof7 Mar 2024US 2024/0079855 A1Shenzhen Berxel Photonics Co., Ltd.
- Semiconductor integrated circuit and methodology for making same4 Jan 2024US 2024/0006845 A1
Most cited
By later US patents
- Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same181US 6,597,490 B2CoreTek, Inc. · 2003
- Unitary lens semiconductor device160US 5,633,527 ASandia Corporation · 1997
- Grating coupled vertical cavity optoelectronic devices122US 6,031,243 A2000
- Conductive element with lateral oxidation barrier115US 5,719,891 APicolight Incorporated · 1998
- High intensity single-mode VCSELs84US 5,838,715 AHewlett-Packard Company · 1998