Method for manufacturing a distributed Bragg reflector for 1550 nm vertical-cavity surface-emitting laser

A method for manufacturing a distributed Bragg reflector, wherein the distributed Bragg reflector is applied to a 1550 nm vertical-cavity surface-emitting laser for being used as a top distributed Bragg reflector or a bottom distributed Bragg reflector, the method comprising:

• forming an optical multilayer film on a substrate, wherein the substrate is a silicon wafer, a gallium arsenide wafer, a silicon carbide wafer, or a glass substrate;
• wherein, when the distributed Bragg reflector is applied to the 1550 nm vertical-cavity surface-emitting laser for being used as the bottom distributed Bragg reflector, the step of forming the optical multilayer film includes:
• forming a reflective metal layer on the substrate, and forming silicon layers and silicon dioxide layers that are alternately stacked to each other on the reflective metal layer;
• wherein the silicon dioxide layers are formed by a process of nano-sputtering and micro-plasma oxidation;
• and
• wherein, when the distributed Bragg reflector is applied to the 1550 nm vertical-cavity surface-emitting laser for being used as the bottom distributed Bragg reflector, the reflective metal layer includes a molybdenum layer and a silver layer;
• wherein, according to a formation sequence on the substrate, the optical multilayer film includes:
• the molybdenum layer having a thickness of 60 nm, the silver layer having a thickness of 20 nm, the silicon layer having a thickness of 173.3 nm, the silicon dioxide layer having a thickness of 270 nm, the silicon layer having a thickness of 98.4 nm, the silicon dioxide layer having a thickness of 269.9 nm, the silicon layer having a thickness of 295.2 nm, the silicon dioxide layer having a thickness of 269.9 nm, the silicon layer having a thickness of 98.5 nm, the silicon dioxide layer having a thickness of 269.3 nm, the silicon layer having a thickness of 89.4 nm, and a niobium pentoxide layer having a thickness of 20 nm;
• wherein a thickness tolerance of each of the layers in the optical multilayer film is less than ±1%.