Vertical-cavity surface-emitting laser and method for forming the same
AssigneeWin Semiconductors Corp.
InventorsMin-Chang Tu, Jiun-Tsuen Lai, Wan-Ting Chien
Life of this patent
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Abstract
A vertical cavity surface emitting laser includes an active area, an inner trench, an outer trench, and a first implantation region. The active area includes a first mirror, an active region, a second mirror, and an etch stop layer. The first mirror is formed over a substrate. The active region is formed over the first mirror. The second mirror is formed over the active region. The etch stop layer with an aperture is formed between the active region and the second mirror. The inner trench surrounds the active area in a top view. The outer trench is formed beside the inner trench. The first implantation region is formed below the inner trench.
Claims19
A VCSEL, comprising:
- an active area, comprising:
- a first mirror formed over a substrate;
- an active region formed over the first mirror;
- a second mirror formed over the active region;
- and
- an etch stop layer with an aperture formed between the active region and the second mirror;
- an inner trench surrounding the active area in a top view;
- an outer trench formed beside the inner trench;
- and
- a first implantation region formed below the inner trench,
- wherein a bottom surface of the inner trench is defined by the etch stop layer.
A VCSEL, comprising:
- an active region sandwiched between a first mirror and a second mirror;
- an etch stop layer with an aperture formed between the active region and the second mirror;
- an outer trench formed through the second mirror, the etch stop layer, the active region, and the first mirror;
- an inner trench formed through the second mirror;
- a first implantation region formed under the inner trench;
- and
- a second implantation region formed under the outer trench,
- wherein a bottom surface of the inner trench is level with the etch stop layer.
A method for forming a VCSEL, comprising:
- forming a first mirror over a substrate;
- forming an active region over the first mirror;
- forming a second mirror over the active region;
- forming an outer trench in the first mirror, the active region, and the second mirror;
- oxidizing a spacer layer between the active region and the second mirror to form an etch stop layer with an aperture;
- forming an inner trench stopped directly on the etch stop layer;
- and
- forming a first implantation region under the inner trench.
Dependencies are inferred from the claim text.