Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff
AssigneeXerox Corporation
InventorsChristopher L. Chua, Michael A. Kneissl, David P. Bour
Life of this patent
Estimating the term…
Abstract
A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector on a sapphire substrate, a second substrate bonded to the first distributed Bragg reflector, the sapphire substrate removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.
Claims15
A method for making a nitride based resonant cavity semiconductor structure comprising the steps of:
- depositing a laser absorption layer on a transparent substrate;
- depositing a plurality of III-V nitride semiconductor layers on said laser absorption layer, said plurality of III-V nitride semiconductor layers forming a resonant cavity, at least one of said plurality of III-V nitride semiconductor layers forms an active region;
- depositing a first distributed Bragg reflector on said plurality of III-V nitride semiconductor layers;
- attaching a support substrate to said first distributed Bragg reflector;
- removing said transparent substrate and said laser absorption layer from said plurality of III-V nitride semiconductor layers;
- depositing a second distributed Bragg reflector on said plurality of III-V nitride semiconductor layers, opposite said first distributed Bragg reflector;
- etching said plurality of III-V nitride semiconductor layers to expose two contact layers;
- and
- forming electrodes on said two contact layers to bias said active region.
Dependencies are inferred from the claim text.