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US 12,671,232 B2Granted
Spontaneous and stimulated emission devices based on relaxed III-nitride materials
AssigneeOpnovix Corp.
InventorsMichael R. Krames, Jun Wang, Nicolas Grandjean, Yao Chen, Jean-Francois Carlin, Etienne Giraud
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Abstract
Spontaneous and stimulated emission devices such as edge emitting laser diodes and vertical cavity surface emitting lasers operating in the visible spectrum and in the infrared spectrum between 380 mm and 1600 nm, and to the application of the light-emitting devices are disclosed. The devices are based on relaxed InGaN to provide strain-balanced epitaxial layer stacks.
Claims14
A vertical-cavity surface-emitting laser (VCSEL) device, wherein the VCSEL device comprises:
- a III-nitride layer;
- a first distributed Bragg reflector (DBR) stack overlying the III-nitride layer;
- a relaxed In-containing III-nitride layer comprising a relaxed In-containing III-nitride surface, wherein the relaxed In-containing III-nitride layer underlies or overlies the first DBR stack;
- an active region overlying the relaxed In-containing III-nitride layer;
- and
- a second DBR stack overlying the active region;
- wherein,
- the active region comprises at least one In-containing III-nitride quantum well;
- the active region is lattice matched to the relaxed In-containing III-nitride layer;
- the relaxed In-containing III-nitride layer has an InN mole fraction greater than 0;
- and
- the relaxed In-containing III-nitride layer has a single-phase gallium-polar (0001) orientation and a substantially relaxed in-plane a-lattice parameter.
9 more elements
Dependencies are inferred from the claim text.