H01F 10/002
Antiferromagnetic thin films, i.e. films exhibiting a néel transition temperature
Official title: {Antiferromagnetic thin films, i.e. films exhibiting a Néel transition temperature (H01F10/3218 and H01F10/3268 take precedence)}
H01F10/002 (Antiferromagnetic thin films, i.e. films exhibiting a néel transition temperature) appears on 26 US grants and 23 published applications in this corpus.
Search patents in H01F- Granted patents
- 26
- Published applications
- 23
- Assignees
- 23
- Inventors
- 70
- Latest grant
- 7 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 1 | 1 |
| 2011 | 0 | 1 |
| 2012 | 1 | 0 |
| 2013 | 1 | 2 |
| 2014 | 2 | 4 |
| 2015 | 0 | 2 |
| 2016 | 3 | 1 |
| 2017 | 3 | 2 |
| 2018 | 0 | 1 |
| 2019 | 1 | 0 |
| 2020 | 3 | 4 |
| 2021 | 0 | 0 |
| 2022 | 1 | 2 |
| 2023 | 1 | 0 |
| 2024 | 1 | 0 |
| 2025 | 1 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Device and method for high speed metamagnetic resistive switching7 Jul 2026US 12,677,602 B1The Government of the United States as represented by the Director, National Security Agency
- Controlling a quantum point junction on the surface of an antiferromagnetic topological insulator27 May 2025US 12,315,658 B2Rutgers, The State University of New Jersey
- Pattern writing of magnetic order using ion irradiation of a magnetic phase transitional thin film24 Sep 2024US 12,100,539 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Electrical-current control of structural and physical properties via strong spin-orbit interactions in canted antiferromagnetic Mott insulators19 Sep 2023US 11,765,989 B2The Regents of the University of Colorado
- Hall bar device for memory and logic applications25 Jan 2022US 11,233,192 B1Board of Regents of the University of Nebraska
- Controlling a quantum point junction on the surface of an antiferromagnetic topological insulator17 Nov 2022US 2022/0367090 A1Rutgers, The State University of New Jersey
- Hall bar device for memory and logic applications10 Feb 2022US 2022/0045265 A1Board of Regents of the University of Nebraska
- Pattern writing of magnetic order using ion irradiation of a magnetic phase transitional thin film17 Dec 2020US 2020/0395156 A1The Government of the United States of America, as represented by the Secretary of the Navy
- Magnetic devices including iron-rhodium films providing bi-stable magnetic order at room temperature, magnetic memory systems including the same and related methods of operation10 Dec 2020US 2020/0388750 A1Cornell University
- Non-collinear antiferromagnets for high density and low power spintronics devices25 Jun 2020US 2020/0203601 A1Wisconsin Alumni Research Foundation
Most cited
By later US patents
- Antiferromagnetic film superior in corrosion resistance, magnetoresistance-effect element and magnetoresistance-effect head including such thin film42US 5,287,237 AHitachi, Ltd. · 1994
- Method for making a spin valve magnetoresistive sensor33US 5,871,622 AInternational Business Machines Corporation · 1999
- Articles comprising magnetically soft thin films28US 5,976,715 ALucent Techologies Inc. · 1999
- Articles comprising magnetically soft thin films and methods for making such articles13US 5,780,175 ALucent Technologies Inc. · 1998
- Growth of oxide exchange bias layers5US 5,783,262 AThe Regents of the University of California · 1998