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US 2020/0203601 A1Published application
Non-collinear antiferromagnets for high density and low power spintronics devices
AssigneeWisconsin Alumni Research Foundation
InventorsChang-Beom Eom, Tianxiang Nan
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Abstract
Spintronic devices based on metallic antiferromagnets having a non-collinear spin structure are provided. Also provided are methods for operating the devices. The spintronic devices are based on a bilayer structure that includes a spin torque layer of an antiferromagnetic material having a non-collinear triangular spin structure adjoining a layer of ferromagnetic material.
Claims9
A spintronic device comprising:
- a ferromagnetic layer comprising a ferromagnetic material having perpendicular magnetization;
- a spin-torque layer comprising a metallic antiferromagnetic material having a non-collinear spin structure adjoining the ferromagnetic layer at an interface;
- and
- a current source configured to pass an in-plane charge current through the spin torque layer.
1 more element
A method of modulating the magnetization in a spintronic device comprising:
- a ferromagnetic layer comprising a ferromagnetic material;
- a spin-torque layer comprising a metallic antiferromagnetic material having a non-collinear spin structure in contact with the ferromagnetic layer at an interface;
- and
- a current source configured to pass an in-plane charge current through the spin-torque layer, the method comprising:
- passing an in-plane charge current through the spin-torque layer, whereby spin currents having out-of-plane spin polarizations are generated in the spin-torque layer giving rise to a spin torque in the ferromagnetic layer that modulates the magnetization of the ferromagnetic material.
2 more elements
A magnetic tunnel junction device comprising;
- a magnetic tunnel junction comprising:
- a free magnetic layer comprising a ferromagnetic material;
- a pinned layer comprising a ferromagnetic material having a fixed direction of magnetization;
- and
- a barrier layer comprising an electrically insulating material separating the ferromagnetic layer from the pinned layer;
- a spin torque layer comprising a metallic antiferromagnetic material having a having a non-collinear spin structure in contact with the free magnetic layer at an interface;
- a write current source configured to pass an in-plane charge current through the spin torque layer;
- a read current source configured to pass a charge current through the magnetic tunnel junction;
- and
- a voltage source configured to apply a bias voltage between the pinned layer and the spin-torque layer.
7 more elements
A method of operating a magnetic tunnel junction device comprising:
- a magnetic tunnel junction comprising:
- a free magnetic layer comprising a ferromagnetic material;
- a pinned layer comprising a ferromagnetic material having a fixed direction of magnetization;
- and
- a barrier layer comprising an electrically insulating material separating the ferromagnetic layer from the pinned layer;
- a spin torque layer comprising a metallic antiferromagnetic material having a having a non-collinear spin structure in contact with the free magnetic layer at an interface;
- a write current source configured to pass an in-plane charge current through the spin torque layer;
- and
- a read current source configured to pass a charge current through the magnetic tunnel junction, the method comprising;
- passing an in-plane write current through the spin torque layer, whereby spin currents having out-of-plane spin polarizations are generated in the spin-torque layer, giving rise to a spin torque in the free magnetic layer that switches the magnetization of the free magnetic layer;
- and
- passing a read current through the magnetic tunnel junction and measuring the resistance of the magnetic tunnel junction.
9 more elements
Dependencies are inferred from the claim text.