Method for making a spin valve magnetoresistive sensor

A method for depositing a film for use in a spin valve magnetoresistive sensor, the method comprising:

• providing, in an ion beam sputtering chamber having a sputtering ion gun and an ion assist gun, a target consisting essentially of Ni and a substrate to which Ni atoms from the Ni target are to be directed;
• directing a non-neutralized beam of noble gas positive ions through the sputtering ion gun of the sputtering chamber to the Ni target to eject Ni atoms from the Ni target toward the substrate;
• introducing O.sub.2 into the sputtering chamber for interaction with the ejected Ni atoms;
• whereby the energy of the ejected Ni atoms aids in the dissociation of the O.sub.2 to form an essentially stoichiometric film of NiO on the substrate.

A method for depositing a stack of films for use in making a spin valve magnetoresistive sensor, the method comprising:

• providing, in an ion beam sputtering chamber having a sputtering ion gun and an ion assist gun, a base onto which the films are to be deposited;
• providing, in the ion beam sputtering chamber, a target consisting essentially of Ni, at least one ferromagnetic target, and a target consisting essentially of Cu;
• introducing O.sub.2 into the sputtering chamber;
• directing a non-neutralized beam of noble gas positive ions through the sputtering ion gun of the sputtering chamber to the Al target to eject Al atoms from the Al target in the presence of the O.sub.2, whereby a film consisting essentially of Al.sub.2 O.sub.3 is deposited on the base;
• directing a non-neutralized beam of noble gas positive ions through the sputtering ion gun of the sputtering chamber to the Ni target to eject Ni atoms from the Ni target toward the Al.sub.2 O.sub.3 film in the presence of the O.sub.2, whereby the energy of the ejected Ni atoms aids in the dissociation of the O.sub.2 to form an essentially stoichiometric film of NiO on the Al.sub.2 O.sub.3 film;
• removing O.sub.2 from the sputtering chamber;
• without sputter etching the NiO film, directing a non-neutralized beam of noble gas positive ions through the sputtering ion gun of the sputtering chamber to a ferromagnetic target to deposit a first ferromagnetic layer directly on and in contact with the NiO film;
• depositing a film of Cu on the first ferromagnetic layer by directing a non-neutralized beam of noble gas positive ions through the sputtering ion gun of the sputtering chamber to the Cu target;
• and
• depositing a second ferromagnetic layer on the Cu film by directing a non-neutralized beam of noble gas positive ions through the sputtering ion gun of the sputtering chamber to a ferromagnetic target.