Magnetic devices including iron-rhodium films providing bi-stable magnetic order at room temperature, magnetic memory systems including the same and related methods of operation

A magnetic memory system comprising:

• a magnetic memory including a plurality of addressable regions configured to store data;
• an input buffer configured to store write data for writing to selected ones of the plurality of addressable regions using a write address;
• an output buffer configured to store read data retrieved from selected ones of the plurality of the addressable regions using a read address;
• a substrate;
• and
• an Fe1-xRhx film, on the substrate, the Fe1-xRhx film providing the plurality of addressable regions, where x is in a range from greater than 0.47 to less than 0.50 to provide a bistable magnetic order for the Fe1-xRhx film at room temperature.

A method of operating a magnetic device, the method comprising:

• heating a local region in an Fe1-xRhx film, where x is in a range from greater than 0.47 to less than 0.50, from about room temperature to at least about 350 degrees Kelvin to change a magnetic order of the local region from an antiferromagnetic (AF) order to a ferromagnetic (FM) order characterized by a difference in remanent magnetization of at least 40%;
• cooling the local region from about room temperature to less than about 275 degrees Kelvin to change the magnetic order of the local region from the FM order to the AF order;
• and
• heating the local region from about room temperature to at least about 350 degrees Kelvin to change the magnetic order of the local region from the AF order to the FM order.