Controlling a quantum point junction on the surface of an antiferromagnetic topological insulator
AssigneeRutgers, The State University of New Jersey
InventorsJedediah Pixley, Nicodemos Varnava, David Vanderbilt, Justin Wilson
Life of this patent
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Abstract
Various embodiments include an electrical device comprising an antiferromagnetic topological insulator having a surface comprising a bulk domain wall configured to support a first type of 1D chiral channel, a surface step configured to support a second 1D chiral channel and intersecting the bulk domain wall to form thereat a quantum point junction.
Claims20
An electronic device, comprising:
- an A-type antiferromagnetic topological insulator (AFM TI) having a surface and comprising a bulk domain wall structure supporting a 1D chiral channel between two adjacent surface layer regions that support an anomalous Hall effect of opposite sign;
- a step structure formed on the surface of the AFM TI and intersecting the bulk domain wall structure, the surface step structure supporting 1D chiral channels between surface layer and adjacent second layer regions that support an anomalous Hall effect of opposite sign;
- the intersection of the bulk domain wall structure and the surface step structure providing thereat a quantum point junction (QPJ).
A method of forming an electronic device, comprising:
- on a surface of an A-type antiferromagnetic topological insulator (AFM TI) comprising a bulk domain wall structure supporting a 1D chiral channel between two adjacent surface layer regions that support an anomalous Hall effect of opposite sign, forming a surface step structure intersecting the bulk domain wall structure, the surface step structure supporting 1D chiral channels between surface layer and adjacent second layer regions that support an anomalous Hall effect of opposite sign;
- the intersection of the bulk domain wall structure and the surface step structure providing thereat a quantum point junction (QPJ).
A Mach-Zehnder electron interferometer implemented on a surface of an A-type antiferromagnetic topological insulator (AFM TI), the surface having a bulk domain wall structure supporting a 1D chiral channel between two adjacent surface layer regions that support an anomalous Hall effect of opposite sign;
- a step structure formed on the surface of the AFM TI and intersecting the bulk domain wall structure, the surface step structure supporting 1D chiral channels between surface layer and adjacent second layer regions that support an anomalous Hall effect of opposite sign;
- the intersection of the bulk domain wall structure and the surface step structure providing thereat a quantum point junction (QPJ).
Dependencies are inferred from the claim text.