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AssigneeHitachi, Ltd.
InventorsMasahiro Kitada, Noboru Shimizu, Hideo Tanabe, Ryoichi Nakatani, Isamu Yuito, Naoki Koyama
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In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein:
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of mn to Fe being within a range of from 15/85 to 70/30, wherein:
A thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein:
A magnetoresistance-effect element including a thin antiferromagnetic film formed of Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X wherein an atomic percentage ratio of Mn to Fe is within a range of from 15/85 to 70/30, wherein:
A magnetoresistance-effect element including a thin antiferromagnetic film formed of Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X wherein an atomic percentage ratio of Mn to Fe is within a range of from 15/85 to 70/30, wherein:
A magnetoresistance-effect element including a thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein:
A magnetoresistance-effect element including a thin antiferromagnetic film formed of an Fe-Mn-X alloy consisting essentially of Fe, Mn and a third alloying element X and disposed adjacent to a thin permalloy film in order to control a magnetic domain structure of the thin permalloy film, the thin antiferromagnetic film including Fe and Mn with an atomic percentage ratio of Mn to Fe being within a range of from 15/85 to 70/30, wherein:
Dependencies are inferred from the claim text.