Hall bar device for memory and logic applications
AssigneeBoard of Regents of the University of Nebraska
InventorsChristian Binek, Ather Mahmood, William Echtenkamp
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Abstract
A hall bar device for a memory or logic application can include a gate electrode, a boron-doped chromia layer on the gate electrode; and a hall bar structure with four legs on the boron-doped chromia layer. For a memory application, the hall bar device can be written to by applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field; and can be read from by measuring a voltage across the one leg of the hall bar structure and its opposite leg.
Claims11
A hall bar device for memory and logic applications, comprising:
- a gate electrode;
- a boron-doped chromia layer on the gate electrode;
- and
- a hall bar structure with four legs on the boron-doped chromia layer,
- wherein a ferromagnetic state of the boron-doped chromia layer is controlled by a voltage applied across the gate electrode and one leg of the hall bar structure and is read out by a voltage across the one leg of the hall bar structure and its opposite leg while a read-out current is applied at one of the legs orthogonal to the one leg and its opposite leg to generate an in-plane current density.
A memory device, comprising:
- an array of hall bar devices, each hall bar device comprising:
- a gate electrode;
- a boron-doped chromia layer on the gate electrode;
- and
- a hall bar structure with four legs on the boron-doped chromia layer,
- wherein a ferromagnetic state of the boron-doped chromia layer is controlled by a voltage applied across the gate electrode and one leg of the hall bar structure and is read out by a voltage across the one leg of the hall bar structure and its opposite leg while a read-out current is applied at one of the legs orthogonal to the one leg and its opposite leg to generate an in-plane current density.
A method of operating a hall bar device for a memory application, wherein the hall bar device comprises a gate electrode, a boron-doped chromia layer on the gate electrode;
- and a hall bar structure with four legs on the boron-doped chromia layer, the method comprising:
- writing to the hall bar device, the writing comprising applying a pulse voltage across the gate electrode and one leg of the hall bar structure in the absence of an applied magnetic field;
- and
- reading from the hall bar device, the reading comprising measuring a voltage across the one leg of the hall bar structure and its opposite leg.
Dependencies are inferred from the claim text.