G11C 2213/11
Metal ion trapping, i.e. using memory material including cavities, pores or spaces
Official title: Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
G11C2213/11 (Metal ion trapping, i.e. using memory material including cavities, pores or spaces) appears on 117 US grants and 130 published applications in this corpus.
Search patents in G11C- Granted patents
- 117
- Published applications
- 130
- Assignees
- 38
- Inventors
- 144
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 6 |
| 2004 | 3 | 5 |
| 2005 | 5 | 7 |
| 2006 | 5 | 8 |
| 2007 | 3 | 5 |
| 2008 | 3 | 4 |
| 2009 | 3 | 10 |
| 2010 | 7 | 16 |
| 2011 | 9 | 9 |
| 2012 | 9 | 6 |
| 2013 | 10 | 3 |
| 2014 | 7 | 3 |
| 2015 | 5 | 5 |
| 2016 | 4 | 4 |
| 2017 | 6 | 6 |
| 2018 | 6 | 6 |
| 2019 | 4 | 6 |
| 2020 | 10 | 9 |
| 2021 | 7 | 5 |
| 2022 | 2 | 3 |
| 2023 | 3 | 1 |
| 2024 | 3 | 1 |
| 2025 | 1 | 2 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Resistance change element, storage device, and neural network apparatus28 Apr 2026US 12,614,587 B2Kabushiki Kaisha Toshiba
- Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells2 Sep 2025US 12,406,919 B2Micron Technology, Inc.
- Memory cells with asymmetrical electrode interfaces3 Sep 2024US 12,082,513 B2Micron Technology, Inc.
- Resistive random access memory device with three-dimensional cross-point structure and method of operating the same30 Apr 2024US 11,972,796 B2Kioxia Corporation
- Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells5 Mar 2024US 11,923,289 B2Micron Technology, Inc.
- Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells10 Apr 2025US 2025/0118653 A1Micron Technology, Inc.
- Resistance change element, storage device, and neural network apparatus23 Jan 2025US 2025/0029654 A1Kabushiki Kaisha Toshiba
- Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells6 Jun 2024US 2024/0186234 A1Micron Technology, Inc.
- Resistive random access memory device with three-dimensional cross-point structure and method of operating the same26 Jan 2023US 2023/0024213 A1Kioxia Corporation
- Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells22 Sep 2022US 2022/0302015 A1Micron Technology, Inc.
Most cited
By later US patents
- Ion conductor material193US 4,419,421 AMax-Planck-Gesellschaft Zur FöRderung Der Wissenschaften E. V. · 1983
- Memory device134US 6,768,157 B2Advanced Micro Devices, Inc. · 2004
- Memory device with active and passive layers115US 6,858,481 B2Advanced Micro Devices, Inc. · 2005
- Memory device113US 6,864,522 B2Advanced Micro Devices, Inc. · 2005
- Memory using variable tunnel barrier widths112US 7,538,338 B2Unity Semiconductor Corporation · 2009