G11C 19/14
Digital stores in which the information is moved stepwise: using magnetic elements
Official title: using magnetic elements in combination with active elements, e.g. discharge tubes, semiconductor elements {(contains no documents, see provisionally G11C19/02 - G11C19/10)}
G11C19/14 (Digital stores in which the information is moved stepwise: using magnetic elements) appears on 5 US grants and 4 published applications in this corpus.
Search patents in G11C- Granted patents
- 5
- Published applications
- 4
- Assignees
- 5
- Inventors
- 13
- Latest grant
- 12 Sep 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 0 |
| 2017 | 0 | 0 |
| 2018 | 0 | 3 |
| 2019 | 1 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 1 | 1 |
| 2023 | 1 | 0 |
By publication year. Applications have been published since 2001.
Recent patents
- Memory system12 Sep 2023US 11,755,236 B2Kioxia Corporation
- Semiconductor device, display device, and electronic device15 Mar 2022US 11,276,711 B2Semiconductor Energy Laboratory Co.Ltd.
- Signal channel for reducing crosstalk noise, module substrate and memory module including the same14 Jan 2020US 10,536,127 B2Samsung Electronics Co., Ltd.
- Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory19 Nov 2019US 10,482,987 B2TDK Corporation
- Latch circuit operable as a D-type edge trigger7 Jul 1981US 4,277,699 AInternational Business Machines Corporation
- Memory system3 Mar 2022US 2022/0066688 A1Kioxia Corporation
- Magnetic wall utilization spin mosfet and magnetic wall utilization analog memory13 Dec 2018US 2018/0358105 A1TDK Corporation
- Semiconductor device, display device, and electronic device31 May 2018US 2018/0151593 A1Semiconductor Energy Laboratory Co.Ltd.
- Signal channel for reducing crosstalk noise, module substrate and memory module including the same3 May 2018US 2018/0123548 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Latch circuit operable as a D-type edge trigger20US 4,277,699 AInternational Business Machines Corporation · 1981
- Semiconductor device, display device, and electronic device3US 11,276,711 B2Semiconductor Energy Laboratory Co.Ltd. · 2022
- Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory1US 10,482,987 B2TDK Corporation · 2019
- Signal channel for reducing crosstalk noise, module substrate and memory module including the same1US 10,536,127 B2Samsung Electronics Co., Ltd. · 2020