Magnetic wall utilization spin mosfet and magnetic wall utilization analog memory
AssigneeTDK Corporation
InventorTomoyuki SASAKI
Life of this patent
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Abstract
A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a channel layer, a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer, a magnetization fixed layer provided at a second end portion opposite to the first end portion, and a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer.
Claims14
A magnetic wall utilization spin MOSFET comprising:
- a magnetic wall driving layer comprising a magnetic wall, a first region, a second region, and a third region located between the first region and the second region;
- a channel layer;
- a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer;
- a magnetization fixed layer provided at a second end portion opposite to the first end portion;
- and
- a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer.
Dependencies are inferred from the claim text.