Semiconductor device, display device, and electronic device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHiroki INOUE, Fumika AKASAWA
Life of this patent
Estimating the term…
Abstract
A level shifter including a transistor that can be formed through the same process as a display portion is provided. A semiconductor device serves as a level shifter including transistors having the same conductivity type. The semiconductor device includes a so-called MIS capacitor in which metal, an insulator, and a semiconductor are stacked as a capacitor for boosting an input signal. Since the MIS capacitor is used, the gate-source voltage of a transistor for generating an output signal can be increased. Thus, boosting operation to generate the output signal can be performed more surely.
Claims16
A semiconductor device comprising:
- a first transistor, a second transistor, a third transistor, and a fourth transistor;
- and
- a first capacitor and a second capacitor,
- wherein a gate of the first transistor and one of a source and a drain of the first transistor are electrically connected to a first wiring to which an input signal is supplied,
- wherein a gate of the second transistor, a gate of the fourth transistor, and a first electrode of the second capacitor are electrically connected to a second wiring to which an inverted input signal is supplied,
- wherein one of a source and a drain of the third transistor is electrically connected to a third wiring,
- wherein one of a source and a drain of the second transistor and one of a source and a drain of the fourth transistor are electrically connected to a fourth wiring,
- wherein a first electrode of the first capacitor is electrically connected to the other of the source and the drain of the first transistor, the other of the source and the drain of the second transistor, and a gate of the third transistor,
- wherein a second electrode of the first capacitor is electrically connected to a second electrode of the second capacitor, the other of the source and the drain of the third transistor, and the other of the source and the drain of the fourth transistor, and
- wherein the semiconductor device is configured to generate an output signal by boosting the input signal.
A semiconductor device comprising:
- a first transistor, a second transistor, and a third transistor;
- and
- a first capacitor and a second capacitor,
- wherein one of a source and a drain of the first transistor is electrically connected to a first wiring to which an input signal is supplied,
- wherein a gate of the third transistor and a first electrode of the second capacitor are electrically connected to a second wiring to which an inverted input signal is supplied,
- wherein one of a source and a drain of the second transistor is electrically connected to a third wiring,
- wherein one of a source and a drain of the third transistor is electrically connected to a fourth wiring,
- wherein a gate of the first transistor is electrically connected to a fifth wiring,
- wherein a first electrode of the first capacitor is electrically connected to the other of the source and the drain of the first transistor and a gate of the second transistor,
- wherein a second electrode of the first capacitor is electrically connected to a second electrode of the second capacitor, the other of the source and the drain of the second transistor, and the other of the source and the drain of the third transistor, and
- wherein the semiconductor device is configured to generate an output signal by boosting the input signal.
Dependencies are inferred from the claim text.