Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
AssigneeTDK Corporation
InventorTomoyuki Sasaki
Life of this patent
Estimating the term…
Abstract
A magnetic wall utilization spin MOSFET includes a magnetic wall driving layer including a magnetic wall, a first region, a second region, and a third region located between the first region and the second region, a channel layer, a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer, a magnetization fixed layer provided at a second end portion opposite to the first end portion, and a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer.
Claims14
A magnetic wall utilization spin MOSFET comprising:
- a magnetic wall driving layer comprising a magnetic wall, a first region, a second region, and a third region located between the first region and the second region;
- a channel layer;
- a magnetization free layer provided at a first end portion of a first surface of the channel layer, and arranged so as to be in contact with the third region of the magnetic wall driving layer;
- a magnetization fixed layer provided at a second end portion opposite to the first end portion;
- and
- a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer;
- and
- a readout electrode layer provided at a position overlapping the magnetization free layer in plan view on a fourth surface of the magnetic wall driving layer opposite to a third surface of the magnetic wall driving layer on which the magnetization free layer is provided in the third region of the magnetic wall drive layer, the fourth surface being provided in the third region of the magnetic wall drive layer.
A magnetic wall utilization spin MOSFET comprising:
- a channel layer having a first surface and a second surface opposing each other;
- a magnetic wall driving layer having a third surface and a fourth surface opposing each other, the magnetic wall driving layer comprising a magnetic wall, a first region, a second region, and a third region located between the first region and the second region;
- a magnetization free layer provided at a first end portion of the first surface of the channel layer between the first surface and the third surface, and arranged so as to be in contact with the third region of the magnetic wall driving layer;
- a magnetization fixed layer provided at a second end portion opposite to the first end portion;
- a gate electrode provided between the first end portion and the second end portion of the channel layer through a gate insulating layer;
- and
- a readout electrode layer provided to have the magnetic wall driving layer between the readout electrode layer and the magnetization free layer, the readout electrode layer being provided at a position overlapping the magnetization free layer in plan view on the fourth surface opposite to the third surface on which the magnetization free layer is provided in the third region of the magnetic wall drive layer, the fourth surface being provided in the third region of the magnetic wall drive layer.
Dependencies are inferred from the claim text.