G11C 17/143
Using laser-fusible links
Official title: {using laser-fusible links}
G11C17/143 (Using laser-fusible links) appears on 67 US grants and 78 published applications in this corpus.
Search patents in G11C- Granted patents
- 67
- Published applications
- 78
- Assignees
- 43
- Inventors
- 129
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1985 | 1 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 1 | 3 |
| 2004 | 3 | 1 |
| 2005 | 1 | 2 |
| 2006 | 1 | 5 |
| 2007 | 1 | 7 |
| 2008 | 3 | 7 |
| 2009 | 4 | 2 |
| 2010 | 3 | 4 |
| 2011 | 4 | 3 |
| 2012 | 8 | 5 |
| 2013 | 3 | 2 |
| 2014 | 3 | 1 |
| 2015 | 1 | 3 |
| 2016 | 2 | 3 |
| 2017 | 3 | 9 |
| 2018 | 5 | 6 |
| 2019 | 5 | 4 |
| 2020 | 5 | 2 |
| 2021 | 2 | 3 |
| 2022 | 1 | 2 |
| 2023 | 1 | 2 |
| 2024 | 3 | 1 |
| 2025 | 1 | 0 |
| 2026 | 1 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Delay elements for command timing in a memory device25 Aug 2026US 12,717,734 B2Micron Technology, Inc.
- Fuse block unit and fuse block system and memory device11 Feb 2025US 12,224,022 B2Windbond Electronics Corp.
- Method and apparatus for enabling multiple return material authorizations (RMAs) on an integrated circuit device31 Dec 2024US 12,183,412 B2Altera Corporation
- Memory device and semiconductor device including the same22 Oct 2024US 12,125,515 B2Samsung Electronics Co., Ltd.
- Delay elements for command timing in a memory device4 Jun 2024US 12,001,356 B2Micron Technology, Inc.
- Delay elements for command timing in a memory device26 Sep 2024US 2024/0320169 A1Micron Technology, Inc.
- Fuse block unit and fuse block system and memory device19 Oct 2023US 2023/0335206 A1Winbond Electronics Corp.
- Delay elements for command timing in a memory device2 Mar 2023US 2023/0069576 A1Micron Technology, Inc.
- Memory device and semiconductor device including the same22 Dec 2022US 2022/0406368 A1Samsung Electronics Co., Ltd.
- State detection circuit for anti-fuse memory cell, and memory28 Apr 2022US 2022/0130448 A1Changxin Memory Technologies, Inc.
Most cited
By later US patents
- Transmission/reception semiconductor device with memory element and antenna on same side of conductive adhesive218US 7,816,721 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Implementing vertical die stacking to distribute logical function over multiple dies in through-silicon-via stacked semiconductor device41US 8,516,409 B2International Business Machines Corporation · 2013
- Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling26US 7,629,234 B2Electro Scientific Industries, Inc. · 2009
- Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements25US 8,008,745 B2Nantero, Inc. · 2011
- Programmable circuits for performing machine learning operations on edge devices16US 10,825,536 B1QUALCOMM Incorporated · 2020