G11C 13/0004
Comprising amorphous/crystalline phase transition cells
Official title: {comprising amorphous/crystalline phase transition cells}
G11C13/0004 (Comprising amorphous/crystalline phase transition cells) appears on 5,082 US grants and 5,543 published applications in this corpus.
Search patents in G11C- Granted patents
- 5,082
- Published applications
- 5,543
- Assignees
- 473
- Inventors
- 3,956
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 3 | 0 |
| 1980 | 3 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 5 | 0 |
| 1995 | 4 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 7 | 0 |
| 1999 | 5 | 0 |
| 2000 | 5 | 0 |
| 2001 | 2 | 0 |
| 2002 | 11 | 18 |
| 2003 | 27 | 66 |
| 2004 | 46 | 103 |
| 2005 | 71 | 110 |
| 2006 | 87 | 179 |
| 2007 | 97 | 196 |
| 2008 | 160 | 333 |
| 2009 | 166 | 345 |
| 2010 | 295 | 410 |
| 2011 | 364 | 296 |
| 2012 | 329 | 284 |
| 2013 | 291 | 278 |
| 2014 | 312 | 301 |
| 2015 | 304 | 235 |
| 2016 | 298 | 218 |
| 2017 | 251 | 198 |
| 2018 | 198 | 192 |
| 2019 | 241 | 307 |
| 2020 | 303 | 305 |
| 2021 | 279 | 298 |
| 2022 | 257 | 285 |
| 2023 | 203 | 205 |
| 2024 | 220 | 182 |
| 2025 | 155 | 116 |
| 2026 | 64 | 83 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Process for cointegration of two phase change memory (PCM) arrays having different phase change materials, and in-memory computation system utilizing the two PCM arrays6 Oct 2026US 12,757,642 B2STMicroelectronics International N. V.
- Memory device to sense memory cells without bitline precharge29 Sep 2026US 12,749,530 B2Micron Technology, Inc.
- Differential subthreshold read of memory cell pair in a memory device22 Sep 2026US 12,744,083 B2Micron Technology, Inc.
- Forward-looking determination of read voltage using memory cell patterns8 Sep 2026US 12,731,639 B2Micron Technology, Inc.
- Spike-timing-dependent plasticity using inverse resistivity phase-change material1 Sep 2026US 12,727,396 B2International Business Machines Corporation
- Method and Apparatus for Computing Operations on a Non-volatile Memory Device8 Oct 2026US 2026/0311756 A1Singapore University of Technology and Design
- Programming for non-volatile memory17 Sep 2026US 2026/0279442 A1STMicroelectronics International N. V.
- Electronic device and method27 Aug 2026US 2026/0252254 A1STMicroelectronics International N. V.
- Programming circuit, integrated circuit, and method27 Aug 2026US 2026/0252869 A1Taiwan Semiconductor Manufacturing Company.Ltd
- In-memory computation system using a segmented memory architecture with local memory array selection for simultaneously performing multiple independent operations27 Aug 2026US 2026/0253636 A1STMicroelectronics International N. V.
Most cited
By later US patents
- Chalcogenide memory cell with a plurality of chalcogenide electrodes671US 5,920,788 AMicron Technology, Inc. · 1999
- Electrically erasable phase change memory628US 5,166,758 AEnergy Conversion Devices, Inc. · 1992
- Memory element with memory material comprising phase-change material and dielectric material570US 6,087,674 AEnergy Conversion Devices, Inc. · 2000
- Multibit single cell memory element having tapered contact545US 5,687,112 AEnergy Conversion Devices, Inc. · 1997
- Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom495US 5,296,716 AEnergy Conversion Devices, Inc. · 1994