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US 12,749,530 B2Granted
Memory device to sense memory cells without bitline precharge
AssigneeMicron Technology, Inc.
InventorsMichele Maria Venturini, Umberto di Vincenzo
Life of this patent
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Abstract
Systems, methods, and apparatus related to memory devices. In one approach, a memory device controls a power supply to a detector that is used to sense a voltage of a bitline coupled to a memory cell. An output of the detector indicates a logic state of the selected memory cell. By controlling a voltage of the power supply, a detection threshold of the detector can be increased as the voltage on the bitline increases. This permits the detector to be used without requiring precharge of the bitline.
Claims20
An apparatus comprising:
- a memory array having memory cells;
- a bitline coupled to at least one first memory cell;
- a current source configured to provide a reference current;
- and
- a first transistor, coupling the current source to the bitline, wherein a first gate voltage of the first transistor is increased in magnitude during sensing of the first memory cell.
2 more elements
A system comprising:
- sensing circuitry configured to sense memory cells of a memory device;
- an access line coupled to at least one first memory cell, and to supply power to the sensing circuitry;
- and
- a controller configured to:
- receive a read command from a host device;
- in response to receiving the read command, initiate a read operation;
- and
- increase a magnitude of at least one ramp voltage during the read operation.
5 more elements
A method comprising:
- applying a first voltage to a wordline to access at least one memory cell in a three-dimensional cross-point memory array;
- applying a second voltage to a bitline to access the memory cell;
- increasing a magnitude of at least one gate voltage during a sensing operation to read the memory cell;
- controlling the second voltage using the gate voltage;
- detecting a logic state of the memory cell;
- and
- providing an amplified output indicating the logic state of the memory cell.
4 more elements
Dependencies are inferred from the claim text.