C30B 9/00
Single-crystal growth from melt solutions using molten solvents
Official title: Single-crystal growth from melt solutions using molten solvents (by normal or gradient freezing C30B11/00; by zone-melting C30B13/00; by crystal pulling C30B15/00; on immersed seed crystal C30B17/00; by liquid phase epitaxial growth C30B19/00; under a protective fluid C30B27/00)
C30B9/00 (Single-crystal growth from melt solutions using molten solvents) appears on 480 US grants and 474 published applications in this corpus.
Search patents in C30B- Granted patents
- 480
- Published applications
- 474
- Assignees
- 242
- Inventors
- 958
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 3 | 0 |
| 1978 | 4 | 0 |
| 1979 | 0 | 0 |
| 1980 | 5 | 0 |
| 1981 | 4 | 0 |
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 5 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 9 | 0 |
| 1991 | 7 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 9 | 0 |
| 1995 | 4 | 0 |
| 1996 | 7 | 0 |
| 1997 | 4 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 11 | 0 |
| 2001 | 8 | 2 |
| 2002 | 5 | 7 |
| 2003 | 8 | 5 |
| 2004 | 1 | 8 |
| 2005 | 2 | 7 |
| 2006 | 7 | 12 |
| 2007 | 5 | 29 |
| 2008 | 12 | 29 |
| 2009 | 19 | 28 |
| 2010 | 20 | 23 |
| 2011 | 22 | 26 |
| 2012 | 16 | 24 |
| 2013 | 26 | 36 |
| 2014 | 20 | 26 |
| 2015 | 19 | 34 |
| 2016 | 25 | 39 |
| 2017 | 23 | 26 |
| 2018 | 49 | 25 |
| 2019 | 22 | 18 |
| 2020 | 20 | 11 |
| 2021 | 12 | 2 |
| 2022 | 3 | 10 |
| 2023 | 10 | 13 |
| 2024 | 7 | 7 |
| 2025 | 5 | 11 |
| 2026 | 4 | 16 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Synthetic single crystal diamond and method for producing same8 Sep 2026US 12,729,456 B2Sumitomo Electric Industries, Ltd.
- Synthetic diamond from a levitating supersaturated solvent at low pressure: process, apparatus, and material25 Aug 2026US 12,716,147 B2Cosmic Diamonds LLC
- Synthetic single crystal diamond and method for manufacturing same21 Apr 2026US 12,606,931 B2Sumitomo Electric Industries, Ltd.
- Growth method of high-temperature phase lanthanum borosilicate crystal and use21 Apr 2026US 12,606,932 B2Fuzhou University
- Layered double hydroxide crystal, anion adsorbent, and method for producing layered double hydroxide crystal9 Dec 2025US 12,492,135 B2Shinshu University
- Synthetic single crystal diamond, method of producing synthetic single crystal diamond, and infrared optical component17 Sep 2026US 2026/0275569 A1Sumitomo Electric Industries, Ltd.
- Method for single-crystallization regeneration of waste cathode material by vacuum pyrolysis process13 Aug 2026US 2026/0234025 A1Kunming University of Science and Technology
- Synthetic single-crystal diamond, method of manufacturing synthetic single-crystal diamond, and diamond substrate13 Aug 2026US 2026/0234834 A1Sumitomo Electric Industries, Ltd.
- Synthetic single crystal diamond30 Jul 2026US 2026/0217540 A1Sumitomo Electric Industries, Ltd.
- Method and system of growing and using cesium lithium borate crystals30 Jul 2026US 2026/0218409 A1KLA Corporation
Most cited
By later US patents
- High pressure high temperature growth of crystalline group III metal nitrides300US 7,063,741 B2General Electric Company · 2006
- Low temperature method of preparing GaN single crystals146US 5,868,837 ACornell Research Foundation, Inc. · 1999
- Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method99US 6,270,569 B1Hitachi Cable, Ltd. · 2001
- Preparation of oxide crystals95US 5,817,172 ANGK Insulators, Ltd. · 1998
- Apparatus for producing single crystal and quasi-single crystal, and associated method95US 7,368,015 B2Momentive Performance Materials Inc. · 2008