C30B 35/007
Apparatus for preparing, pre-treating the source material to be used for crystal
Official title: {Apparatus for preparing, pre-treating the source material to be used for crystal growth}
C30B35/007 (Apparatus for preparing, pre-treating the source material to be used for crystal) appears on 125 US grants and 183 published applications in this corpus.
Search patents in C30B- Granted patents
- 125
- Published applications
- 183
- Assignees
- 95
- Inventors
- 409
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 1 | 3 |
| 2011 | 0 | 7 |
| 2012 | 1 | 4 |
| 2013 | 2 | 5 |
| 2014 | 3 | 7 |
| 2015 | 2 | 4 |
| 2016 | 8 | 11 |
| 2017 | 5 | 10 |
| 2018 | 5 | 13 |
| 2019 | 11 | 13 |
| 2020 | 12 | 23 |
| 2021 | 10 | 18 |
| 2022 | 18 | 9 |
| 2023 | 15 | 22 |
| 2024 | 13 | 16 |
| 2025 | 12 | 12 |
| 2026 | 7 | 5 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Si ingot single crystal6 Oct 2026US 12,753,525 B2GlobalWafers Co., Ltd.
- Furnace apparatus for crystal production18 Aug 2026US 12,709,819 B2Zadient Technologies SAS
- Heater for retrograde solvothermal crystal growth, method of making, and method of use18 Aug 2026US 12,709,821 B2KYOCERA Corporation
- Apparatus for producing ingot28 Jul 2026US 12,692,626 B2Industrial Technology Research Institute
- Premelter for preliminarily melting silicon to be supplied to main crucible and control method thereof14 Apr 2026US 12,601,084 B2Hanwha Corporation
- Evaporation chamber of a device for evaporating chemical compounds30 Jul 2026US 2026/0216616 A1
- Crystal pulling from a highly impure growth melt2 Apr 2026US 2026/0092393 A1
- Pvt method and apparatus for producing single crystals in a safe process26 Mar 2026US 2026/0085443 A1PVA TePla AG
- Use of freeze drying to manufacture a dopant for semiconductor ingot growth processes29 Jan 2026US 2026/0028743 A1
- Ain single crystal substrate and device8 Jan 2026US 2026/0009158 A1NGK Insulators, Ltd.
Most cited
By later US patents
- Silicon carbide powder for producing silicon carbide single crystal and a method for producing the same13US 8,951,638 B2Denki Kagaku Kogyo Kabushiki Kaisha · 2015
- Polycrystalline III-nitrides8US 8,858,708 B1The United States of America as represented by the Secretary of the Air Force · 2014
- Method for maintaining contained volume of molten material from which material is depleted and replenished7US 10,633,765 B21366 Technologies, Inc. · 2020
- Method of producing a synthetic diamond4US 9,994,970 B2Ecotricity Group Limited · 2018
- Apparatus for producing an ingot comprising a crucible body with a lid assembly having a movable core member and method for producing silicon carbide ingot using the apparatus3US 11,078,599 B2Skc Co., Ltd. · 2021