Polycrystalline III-nitrides
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsMichael J. Callahan, Buguo Wang, John S. Bailey
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AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsMichael J. Callahan, Buguo Wang, John S. Bailey
Estimating the term…
This invention provides a process for producing high-purity dense polycrystalline III-nitride slabs. A vessel which contains a group III-metal such as gallium or an alloy of group III-metals of shallow depth is placed in a reactor. The group III-metal or alloy is heated until a molten state is reached after which a halide-containing source mixed with a carrier gas and a nitrogen-containing source is flowed through the reactor vessel. An initial porous crust of III-nitride forms on the surface of the molten III-metal or alloy which reacts with the nitrogen-containing source and the halide-containing source. The flow rate of the nitrogen-containing source is then increased and flowed into contact with the molten metal to produce a dense polycrystalline III-nitride. The products produced from the inventive process can be used as source material for III-nitride single crystal growth which material is not available naturally.
A method for making a polycrystalline III-nitride of high purity and density comprising flowing a halide-containing vapor and a nitrogen-containing vapor into contact with a molten group III-metal by:
Dependencies are inferred from the claim text.