C30B 31/04
Diffusion or doping processes for single crystals or homogeneous polycrystalline material with
Official title: by contacting with diffusion materials in the liquid state
C30B31/04 (Diffusion or doping processes for single crystals or homogeneous polycrystalline material with) appears on 29 US grants and 33 published applications in this corpus.
Search patents in C30B- Granted patents
- 29
- Published applications
- 33
- Assignees
- 32
- Inventors
- 91
- Latest grant
- 12 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 3 |
| 2010 | 1 | 1 |
| 2011 | 1 | 2 |
| 2012 | 1 | 0 |
| 2013 | 2 | 7 |
| 2014 | 2 | 1 |
| 2015 | 2 | 2 |
| 2016 | 3 | 4 |
| 2017 | 1 | 3 |
| 2018 | 3 | 3 |
| 2019 | 2 | 1 |
| 2020 | 1 | 0 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
| 2025 | 1 | 0 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composite wavelength converter12 Aug 2025US 12,389,725 B2Friedrich-Alexander-Universität Erlangen-Nürnberg
- Boron-doped copper catalysts for efficient conversion of CO2 to multi-carbon hydrocarbons and associated methods19 Jul 2022US 11,390,959 B2The Governing Council of the University of Toronto
- Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface8 Sep 2020US 10,770,613 B21366 Technologies, Inc.
- Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface8 Oct 2019US 10,439,095 B21366 Technologies, Inc.
- Synthesis and processing of pure and NV nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications26 Mar 2019US 10,240,251 B2North Carolina State University
- Digallium trioxide single crystal substrate, method for manufacturing digallium trioxide single crystal, and method for manufacturing digallium trioxide single crystal substrate10 Sep 2026US 2026/0265944 A1Sumitomo Electric Industries, Ltd.
- Single-crystal cathode material modified by molten salt-assisted valence gradient doping, preparation method therefor, and use thereof9 Jul 2026US 2026/0193812 A1Kunming University of Science and Technology
- Methods for producing single crystal silicon wafers for insulated gate bipolar transistors18 Jul 2024US 2024/0240355 A1GlobalWafers Co., Ltd.
- Composite Wavelength Converter8 Dec 2022US 2022/0393080 A1Friedrich-Alexander-Universität Erlangen-Nürnberg
- Boron-doped copper catalysts for efficient conversion of co2 to multi-carbon hydrocarbons and associated methods23 Sep 2021US 2021/0292924 A1The Governing Council of the University of Toronto
Most cited
By later US patents
- Method of fabricating a semiconductor pn junction16US 4,526,632 AJun-Ichi Nishizawa · 1985
- Large area deposition and doping of graphene, and products including the same13US 8,507,797 B2Guardian Industries Corp. · 2013
- Optical materials from intercalation of polyvalent cations in beta double prime alumina8US 4,664,849 AUniversity Patents, Inc. · 1987
- Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface7US 10,439,095 B21366 Technologies, Inc. · 2019
- Method for making epitaxial silicon crystals with uniform doping levels7US 4,201,623 AThe United States of America as represented by the Secretary of the Army · 1980