Methods for producing single crystal silicon wafers for insulated gate bipolar transistors

A method for producing single crystal silicon wafers for insulated gate bipolar transistors (IGBT), the method comprising:

• producing a single crystal silicon ingot, the single crystal silicon ingot having a radial profile of a ratio between (i) a growth velocity, v, and (ii) an axial temperature gradient, G, the single crystal silicon ingot being produced by:
• determining a radial v/G profile of the single crystal silicon ingot;
• selecting an ingot nitrogen concentration at which the ingot is free of gate oxide integrity failures across the ingot radius based on the radial v/G profile of the ingot;
• adding polycrystalline silicon to a crucible disposed within a growth chamber of an ingot puller apparatus;
• heating the polycrystalline silicon to cause a silicon melt to form in the crucible;
• adding nitrogen to the silicon melt to achieve the selected ingot nitrogen concentration;
• and
• pulling a single crystal silicon ingot doped with nitrogen from the melt;
• and
• slicing a plurality of wafers from the single crystal silicon ingot, each wafer of the plurality of wafers having an oxygen concentration of less than 2.75×1017 atoms/cm3, being free of crystal originated particles and being free of gate-oxide integrity failures.