Digallium trioxide single crystal substrate, method for manufacturing digallium trioxide single crystal, and method for manufacturing digallium trioxide single crystal substrate
AssigneeSumitomo Electric Industries, Ltd.
InventorsYukio ISHIKAWA, Keisuke TANIZAKI, Yoshiaki HAGI
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Abstract
A digallium trioxide single crystal substrate is a digallium trioxide single crystal substrate having a circular main surface, wherein the digallium trioxide single crystal substrate has a diameter of 100 mm or more, the digallium trioxide single crystal substrate has a thickness of 600 μm or more, the digallium trioxide single crystal substrate comprises boron, wherein a concentration of the boron is 4 mass ppm or more and 200 mass ppm or less by glow discharge mass spectrometry.
Claims10
A digallium trioxide single crystal substrate having a circular main surface, wherein
- the digallium trioxide single crystal substrate has a diameter of 100 mm or more,
- the digallium trioxide single crystal substrate has a thickness of 600 m or more, and
- the digallium trioxide single crystal substrate comprises boron, wherein
- a concentration of the boron is 4 mass ppm or more and 200 mass ppm or less by glow discharge mass spectrometry.
A method for manufacturing a digallium trioxide single crystal, performed under an air atmosphere, the method comprising:
- providing a single crystal growth apparatus that includes at least a cylindrical crucible and a heating device disposed to surround an outer periphery of the crucible;
- holding a seed crystal made of the digallium trioxide single crystal at a bottom of the crucible, and holding a block or powdered digallium trioxide polycrystal, an n-type dopant, and boron oxide above the seed crystal within the crucible;
- melting a portion of the seed crystal by heating the crucible with the heating device, obtaining a solution in which digallium trioxide derived from the portion of the seed crystal and the digallium trioxide polycrystal is dissolved at a first concentration, and the n-type dopant is dissolved at a second concentration in the boron oxide, and contacting the solution with a remaining portion of the seed crystal;
- and
- growing a crystal from the solution on the remaining portion of the seed crystal to obtain a digallium trioxide single crystal,
- wherein the crucible is made of platinum, and
- a boron concentration in the digallium trioxide single crystal is 4 mass ppm or more and 200 mass ppm or less by glow discharge mass spectrometry.
A method for manufacturing a digallium trioxide single crystal, performed under a nitrogen atmosphere, the method comprising:
- providing a single crystal growth apparatus that includes at least a cylindrical crucible and a heating device disposed to surround an outer periphery of the crucible;
- holding a seed crystal made of the digallium trioxide single crystal at a bottom of the crucible, and holding a block or powdered digallium trioxide polycrystal, an n-type dopant, and boron oxide above the seed crystal within the crucible;
- melting a portion of the seed crystal by heating the crucible with the heating device, obtaining a solution in which digallium trioxide derived from the portion of the seed crystal and the digallium trioxide polycrystal is dissolved at a first concentration, and the n-type dopant is dissolved at a second concentration in the boron oxide, and contacting the solution with a remaining portion of the seed crystal;
- and
- growing a crystal from the solution on the remaining portion of the seed crystal to obtain a digallium trioxide single crystal,
- wherein the crucible is made of pyrolytic boron nitride, and
- a boron concentration in the digallium trioxide single crystal is 4 mass ppm or more and 200 mass ppm or less by glow discharge mass spectrometry.
Dependencies are inferred from the claim text.