US 8,507,797 B2 · Large area deposition and doping of graphene, and products including the same

Abstract

Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).

Claims19

Dependent claims

A method of making a doped graphene thin film, the method comprising:

hetero-epitaxially growing an intermediate graphene thin film on a catalyst thin film, the catalyst thin film having a substantially single-orientation large-grain crystal structure;
doping the intermediate graphene thin film with n-type or p-type dopants in making the doped graphene thin film,
wherein the doped graphene thin film has a sheet resistance less than 150 ohms/square.

Dependencies are inferred from the claim text.

Large area deposition and doping of graphene, and products including the same

Life of this patent

Large area deposition and doping of graphene, and products including the same

Life of this patent

Abstract

Claims19