C30B 11/002
Crucibles or containers for supporting the melt
Official title: {Crucibles or containers for supporting the melt}
C30B11/002 (Crucibles or containers for supporting the melt) appears on 377 US grants and 392 published applications in this corpus.
Search patents in C30B- Granted patents
- 377
- Published applications
- 392
- Assignees
- 245
- Inventors
- 890
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 1 | 0 |
| 1981 | 3 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 7 | 0 |
| 1985 | 4 | 0 |
| 1986 | 6 | 0 |
| 1987 | 5 | 0 |
| 1988 | 6 | 0 |
| 1989 | 5 | 0 |
| 1990 | 8 | 0 |
| 1991 | 8 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 8 | 0 |
| 1995 | 3 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 4 | 0 |
| 1999 | 8 | 0 |
| 2000 | 8 | 0 |
| 2001 | 2 | 0 |
| 2002 | 8 | 8 |
| 2003 | 4 | 9 |
| 2004 | 7 | 8 |
| 2005 | 6 | 11 |
| 2006 | 2 | 9 |
| 2007 | 5 | 7 |
| 2008 | 8 | 24 |
| 2009 | 6 | 25 |
| 2010 | 8 | 28 |
| 2011 | 10 | 22 |
| 2012 | 19 | 28 |
| 2013 | 19 | 38 |
| 2014 | 19 | 23 |
| 2015 | 14 | 24 |
| 2016 | 22 | 22 |
| 2017 | 17 | 17 |
| 2018 | 20 | 12 |
| 2019 | 12 | 13 |
| 2020 | 11 | 17 |
| 2021 | 10 | 7 |
| 2022 | 5 | 10 |
| 2023 | 10 | 12 |
| 2024 | 10 | 8 |
| 2025 | 8 | 5 |
| 2026 | 5 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Low etch pit density, low slip line density, and low strain indium phosphide15 Sep 2026US 12,735,808 B2AXT, Inc.
- Single crystal growth apparatus4 Aug 2026US 12,698,569 B2Novel Crystal Technology, Inc.
- Gallium arsenide single crystal substrate and method of producing same21 Jul 2026US 12,686,946 B2Sumitomo Electric Industries, Ltd.
- Semi-insulating gallium arsenide single crystal, preparation method and growth device therefor24 Feb 2026US 12,559,856 B2Shanxi China Crystal Technologies Co., Ltd.
- Crucible and crucible assembly, for preparing cathode active material6 Jan 2026US 12,516,445 B2Sm Lab Co., Ltd.
- Silicon ingot, crucible for silicon ingot production, method for manufacturing crucible for silicon ingot production, and method for producing silicon ingot3 Sep 2026US 2026/0258578 A1Mitsubishi Materials Electronic Chemicals Co., Ltd.
- Method of producing gallium arsenide single crystal, method of producing gallium arsenide single crystal substrate, gallium arsenide single crystal substrate, and gallium arsenide single crystal20 Aug 2026US 2026/0242980 A1Sumitomo Electric Industries, Ltd.
- Apparatus and method for growing silicon carbide25 Jun 2026US 2026/0176791 A1Tongwei Microelectronics Co., Ltd.
- Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant28 May 2026US 2026/0146367 A1AXT, Inc.
- Gallium arsenide single crystal substrate and method of producing same14 May 2026US 2026/0132546 A1Sumitomo Electric Industries, Ltd.
Most cited
By later US patents
- Pressurized skull crucible for crystal growth using the Czochralski technique95US 5,863,326 ACermet, Inc. · 1999
- Bimetallic turbine airfoil76US 5,348,446 AGeneral Electric Company · 1994
- Equilibrium crystal growth from substrate confined liquid56US 4,479,847 ACalifornia Institute of Technology · 1984
- Crystal growth apparatus and process54US 5,169,486 ABestal Corporation · 1992
- Apparatus for obtaining silicon from fluosilicic acid52US 4,590,043 ASRI International · 1986