C09K 13/10
Containing a boron compound
Official title: containing a boron compound
C09K13/10 (Containing a boron compound) appears on 49 US grants and 55 published applications in this corpus.
Search patents in C09K- Granted patents
- 49
- Published applications
- 55
- Assignees
- 35
- Inventors
- 149
- Latest grant
- 5 Aug 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 1 |
| 2013 | 0 | 2 |
| 2014 | 2 | 0 |
| 2015 | 1 | 4 |
| 2016 | 1 | 3 |
| 2017 | 3 | 2 |
| 2018 | 1 | 4 |
| 2019 | 8 | 4 |
| 2020 | 3 | 8 |
| 2021 | 3 | 2 |
| 2022 | 6 | 9 |
| 2023 | 4 | 7 |
| 2024 | 5 | 2 |
| 2025 | 5 | 4 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structure5 Aug 2025US 12,381,092 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Thermal atomic layer etching processes3 Jun 2025US 12,320,012 B2ASM IP Holding B. V.
- Thermal atomic layer etching processes27 May 2025US 12,312,696 B2ASM IP Holding B. V.
- Method of manufacturing semiconductor package13 May 2025US 12,300,509 B2Samsung Electronics Co., Ltd.
- Etchant composition for etching silicon germanium film and method of manufacturing integrated circuit device by using the same25 Feb 2025US 12,234,400 B2Samsung Electronics Co., Ltd.
- Methods of selectively etching silicon7 May 2026US 2026/0130144 A1APPLIED Materials.Inc.
- Method of manufacturing semiconductor package7 Aug 2025US 2025/0253160 A1Samsung Electronics Co., Ltd.
- Composition for etching silicon nitride layer24 Jul 2025US 2025/0236794 A1Dongwoo Fine-Chem Co., Ltd.
- Etchant composition for etching silicon germanium film and method of manufacturing integrated circuit device by using the same22 May 2025US 2025/0163323 A1Samsung Electronics Co., Ltd.
- Thermal atomic layer etching processes15 May 2025US 2025/0154662 A1ASM IP Holding B. V.
Most cited
By later US patents
- Method for dry-etching aluminum and aluminum alloys42US 4,267,013 AHitachi, Ltd. · 1981
- Oxidation resistant carbon and method for making same28US 5,286,565 AAir Products and Chemicals, Inc. · 1994
- Oxidation resistant carbon and method for making same24US 5,368,938 AAir Products and Chemicals, Inc. · 1994
- Wet etching composition having excellent wetting property for semiconductors19US 5,755,989 ADaikin Industries, Ltd. · 1998
- Thermal atomic layer etching processes16US 10,273,584 B2ASM IP Holding B. V. · 2019