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US 12,320,012 B2Granted
Thermal atomic layer etching processes
AssigneeASM IP Holding B.V.
InventorsTom E. Blomberg, Varun Sharma, Suvi Haukka, Marko Tuominen, Chiyu Zhu
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Abstract
Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
Claims20
A method of etching a film on a substrate in a reaction space, the method comprising one or more etching cycles, each etching cycle comprising:
- exposing the substrate to a first vapor-phase reactant comprising sulfur;
- exposing the substrate to a second vapor-phase reactant, such that volatile species comprising one or more atoms from the film are formed;
- and
- removing the volatile species from the vicinity of the substrate,
- wherein the second vapor-phase reactant comprises a halide reactant.
2 more elements
Dependencies are inferred from the claim text.