Method of manufacturing semiconductor package

A method of manufacturing a semiconductor package, the method comprising:

• providing a first seed layer on an insulation layer such that the first seed layer includes a first metal material;
• forming second seed patterns and conductive patterns on the first seed layer such that the second seed patterns include a second metal material that is different from the first metal material, the conductive patterns include the second metal material, and the second seed patterns and the conductive patterns each have line shapes that extend in a first direction and are spaced apart from each other in a second direction orthogonal to the first direction;
• and
• etching the first seed layer to form first seed patterns such that the first seed patterns have line shapes extending in the first direction and are spaced apart from each other in in the second direction,
• wherein:
• etching the first seed layer includes etching with an etchant that includes fluorine ions and negative ions that undergo a negative ion competing reaction against the fluorine ions,
• the etchant further includes an acid in an amount of 0.2 wt % to 10 wt %, based on a total weight of the etchant, and
• an etching rate of the first seed layer by the etchant is in a range of 200 Å/min to 2,000 Å/min.

A method of manufacturing a semiconductor package, the method comprising:

• forming a first seed layer including titanium;
• forming second seed patterns and conductive patterns on the first seed layer such that the second seed patterns and the conductive patterns each include copper and the second seed patterns and the conductive patterns each have line shapes that extend in a first direction and are apart from each other in a second direction orthogonal to the first direction;
• and
• etching the first seed layer to form first seed patterns such that the first seed patterns have line shapes extending in the first direction and are spaced apart from each other in the second direction,
• wherein:
• etching the first seed layer includes etching with an etchant that includes fluorine ions and negative ions undergoing a negative ion competing reaction against the fluorine ions,
• the etchant further includes a corrosion inhibitor including at least one of, thiazole, benzotriazole, imidazole, thiadiazole, another azole compound, amine, a Schiff base, or an amino acid drug compound, and
• an application time of the etchant is in a range of 1 to 10 times a time value obtained by dividing a thickness of the first seed layer by an etching rate of the etchant on the first seed layer.