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US 5,755,989 AGranted
Wet etching composition having excellent wetting property for semiconductors
AssigneeDaikin Industries, Ltd.
InventorsMasao Ishii, Tomohiro Hosomi, Shigeru Maruyama, Mitsushi Itano
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Abstract
The present invention provides a wet etching composition for semiconductors which is characterized in that a surfactant comprising the two components of an alkylsulfonic acid and an .omega.-hydrofluoro-alkylcarboxylic acid is added to a buffered hydrofluoric acid composed of hydrogen fluoride, ammonium fluoride and water.
Claims9
A wet etching composition for semiconductors comprising:
- a surfactant comprised of an alkylsulfonic acid and an .omega.-hydrofluoroalkylcarboxylic acid;
- and
- a buffered hydrofluoric acid comprised of hydrogen fluoride, ammonium fluoride and water.
Dependencies are inferred from the claim text.