C01B 33/035
By decomposition or reduction of gaseous or vaporised silicon compounds in the
Official title: by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
C01B33/035 (By decomposition or reduction of gaseous or vaporised silicon compounds in the) appears on 275 US grants and 344 published applications in this corpus.
Search patents in C01B- Granted patents
- 275
- Published applications
- 344
- Assignees
- 92
- Inventors
- 466
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 2 | 0 |
| 1979 | 6 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 2 | 0 |
| 1983 | 3 | 0 |
| 1984 | 5 | 0 |
| 1985 | 6 | 0 |
| 1986 | 0 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 4 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 2 |
| 2003 | 2 | 4 |
| 2004 | 1 | 1 |
| 2005 | 1 | 1 |
| 2006 | 2 | 1 |
| 2007 | 0 | 5 |
| 2008 | 1 | 5 |
| 2009 | 2 | 19 |
| 2010 | 5 | 23 |
| 2011 | 8 | 37 |
| 2012 | 12 | 35 |
| 2013 | 19 | 21 |
| 2014 | 13 | 20 |
| 2015 | 25 | 22 |
| 2016 | 18 | 20 |
| 2017 | 15 | 28 |
| 2018 | 7 | 17 |
| 2019 | 22 | 11 |
| 2020 | 19 | 17 |
| 2021 | 6 | 9 |
| 2022 | 16 | 16 |
| 2023 | 7 | 10 |
| 2024 | 7 | 12 |
| 2025 | 9 | 5 |
| 2026 | 6 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Quality evaluation method, manufacturing system of silicon for evaluation, manufacturing method of silicon for evaluation, and silicon for evaluation25 Aug 2026US 12,716,884 B2Shin-Etsu Chemical Co., Ltd.
- Method for producing polycrystalline silicon28 Jul 2026US 12,692,167 B2Wacker Chemie AG
- Polycrystalline silicon rod and process of manufacturing polycrystalline silicon rod30 Jun 2026US 12,668,493 B2Shin-Etsu Chemical Co., Ltd.
- Chemical vapor deposition reactor in polysilicon production process7 Apr 2026US 12,595,589 B2Advanced Material Solutions, LLC
- Passivated silicon-carbon composite materials7 Apr 2026US 12,597,597 B2Group14 Technologies, Inc.
- Gas phase deposition reactor and method for producing polycrystalline silicon1 Oct 2026US 2026/0296900 A1Wacker Chemie AG
- Electroactive Materials for Metal-Ion Batteries14 May 2026US 2026/0132034 A1Nexeon Limited
- Polysilicon rod and method for manufacturing polysilicon rod23 Apr 2026US 2026/0109613 A1Shin-Etsu Chemical Co., Ltd.
- Method for manufacturing silicon rod4 Dec 2025US 2025/0368517 A1Tokuyama Corporation
- Reaction Furnace for Producing Polycrystalline Silicon Rod, Gas Supply Nozzle, Production Method of Polycrystalline Silicon Rod, and Polycrystalline Silicon Rod19 Jun 2025US 2025/0198050 A1Tokuyama Corporation
Most cited
By later US patents
- Process for the deposition of pure semiconductor material372US 4,179,530 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1979
- Process for preparing highly pure silicon granules75US 6,007,869 AWacker Chemie AG · 1999
- Process for removing gaseous contaminating compounds from carrier gases containing halosilane compounds47US 5,051,117 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1991
- Trichlorosilane production process43US 4,526,769 AMotorola, Inc. · 1985
- Method and apparatus for manufacturing high-purity silicon rods39US 4,150,168 AKabushiki Kaisha Komatsu Seisakusho · 1979