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US 12,668,493 B2Granted
Polycrystalline silicon rod and process of manufacturing polycrystalline silicon rod
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTetsuro Okada, Naruhiro Hoshino, Masahiko Ishida
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Abstract
The present invention is related to a polycrystalline silicon rod manufactured with a Siemens method. The polycrystalline silicon rod having a length of 1 m or more in a longitudinal direction. An absolute value of a difference between compressive stress and tensile stress in residual stress in the longitudinal direction on a circumferential surface of the polycrystalline silicon rod is 22 MPa or less.
Claims6
A process of manufacturing a polycrystalline silicon rod in which polycrystalline silicon is deposited on a silicon core wire with a Siemens method,
- the process comprising manufacturing the polycrystalline silicon rod such that a temperature difference AT in a cross-section of the polycrystalline silicon rod is at 200° C. or less over an hour or more before a deposition of polycrystalline silicon is completed,
- wherein an absolute value of a difference between compressive stress and tensile stress in residual stress in the longitudinal direction on a circumferential surface of the polycrystalline silicon rod is 22 MPa or less.
Dependencies are inferred from the claim text.