C01B 33/02
Silicon
Official title: Silicon (forming single crystals or homogeneous polycrystalline material with defined structure C30B)
C01B33/02 (Silicon) appears on 1,456 US grants and 1,959 published applications in this corpus.
Search patents in C01B- Granted patents
- 1,456
- Published applications
- 1,959
- Assignees
- 755
- Inventors
- 3,522
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 4 | 0 |
| 1978 | 19 | 0 |
| 1979 | 16 | 0 |
| 1980 | 14 | 0 |
| 1981 | 14 | 0 |
| 1982 | 19 | 0 |
| 1983 | 15 | 0 |
| 1984 | 24 | 0 |
| 1985 | 20 | 0 |
| 1986 | 8 | 0 |
| 1987 | 18 | 0 |
| 1988 | 15 | 0 |
| 1989 | 22 | 0 |
| 1990 | 13 | 0 |
| 1991 | 14 | 0 |
| 1992 | 14 | 0 |
| 1993 | 7 | 0 |
| 1994 | 10 | 0 |
| 1995 | 8 | 0 |
| 1996 | 5 | 0 |
| 1997 | 2 | 0 |
| 1998 | 11 | 0 |
| 1999 | 7 | 0 |
| 2000 | 8 | 0 |
| 2001 | 6 | 0 |
| 2002 | 7 | 13 |
| 2003 | 7 | 12 |
| 2004 | 7 | 26 |
| 2005 | 12 | 16 |
| 2006 | 10 | 22 |
| 2007 | 10 | 33 |
| 2008 | 7 | 60 |
| 2009 | 20 | 79 |
| 2010 | 38 | 113 |
| 2011 | 47 | 132 |
| 2012 | 48 | 123 |
| 2013 | 69 | 112 |
| 2014 | 70 | 96 |
| 2015 | 78 | 100 |
| 2016 | 72 | 88 |
| 2017 | 79 | 107 |
| 2018 | 54 | 93 |
| 2019 | 78 | 79 |
| 2020 | 74 | 76 |
| 2021 | 50 | 79 |
| 2022 | 67 | 96 |
| 2023 | 63 | 109 |
| 2024 | 73 | 114 |
| 2025 | 48 | 95 |
| 2026 | 50 | 86 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Process for manufacturing silicon-containing materials in a cascade reactor system6 Oct 2026US 12,753,495 B2Wacker Chemie AG
- Method for manufacturing negative electrode active material6 Oct 2026US 12,755,965 B2Toyota Jidosha Kabushiki Kaisha
- Semiconductor assembly gap filler6 Oct 2026US 12,757,337 B2Micron Technology, Inc.
- Circular carbon process29 Sep 2026US 12,747,159 B2BASF SE
- Hydrogen production apparatus, hydrogen production method, silicon fine particles for hydrogen production, and production method for silicon fine particles for hydrogen production15 Sep 2026US 12,735,315 B2Nisshin Kasei Co., Ltd.
- Negative electrode active material, method of manufacturing the negative electrode active material, and negative electrode including the negative electrode active material8 Oct 2026US 2026/0307996 A1Samsung SDI.Co., Ltd.
- Negative electrode active material, negative electrode including the same, and method for manufacturing the same8 Oct 2026US 2026/0312012 A1Samsung SDI.Co., Ltd.
- Gas phase deposition reactor and method for producing polycrystalline silicon1 Oct 2026US 2026/0296900 A1Wacker Chemie AG
- Plasma modification preparation method of silicon-carbon composite material, silicon-carbon composite material and use thereof24 Sep 2026US 2026/0285692 A1Shida Shinghwa Advanced Material Group Co., Ltd.
- Silicon-carbon composite material, preparation method therefor, and application thereof24 Sep 2026US 2026/0285693 A1Ningde Amperex Technology Limited
Most cited
By later US patents
- Process for Polycrystalline film silicon growth529US 6,281,098 B1Midwest Research Institute · 2001
- Process for the deposition of pure semiconductor material372US 4,179,530 AWacker-Chemitronic Gesellschaft fur Elektronik-Grundstoffe mbH · 1979
- Magnetoplasmadynamic apparatus and process for the separation and deposition of materials173US 4,471,003 A1984
- Method for silicon deposition106US 5,798,137 AAdvanced Silicon Materials LLC · 1998
- Magnetoplasmadynamic apparatus for the separation and deposition of materials104US 4,487,162 A1984