Silicon-carbon composite material, preparation method therefor, and application thereof
AssigneeNingde Amperex Technology Limited
InventorYang LI
Life of this patent
Estimating the term…
Abstract
A silicon-carbon composite material includes a carbon matrix and nano-silicon particles, where the nano-silicon particles are located within pores of the carbon matrix, and a Raman spectrum of the silicon-carbon composite material satisfies IA≥1.2IB, where IA is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 520 cm−1±5 cm−1, and IB is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 480 cm−1±5 cm−1.
Claims20
A silicon-carbon composite material, comprising a carbon matrix and nano-silicon particles, wherein the nano-silicon particles are located within pores of the carbon matrix, and a Raman spectrum of the silicon-carbon composite material satisfies IA≥1.2IB, wherein IA is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 520 cm−1±5 cm−1, and IB is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 480 cm−1±5 cm−1.
A secondary battery, comprising a positive electrode plate, a separator, a negative electrode plate, and an electrolyte;
- wherein the negative electrode plate comprises a negative electrode current collector and a negative electrode material layer located on at least one surface of the negative electrode current collector, the negative electrode material layer comprises a negative electrode active material, and the negative electrode active material comprises graphite and a silicon-carbon composite material;
- wherein the silicon-carbon composite material comprises a carbon matrix and nano-silicon particles, wherein the nano-silicon particles are located within pores of the carbon matrix, and a Raman spectrum of the silicon-carbon composite material satisfies IA≥1.2IB, wherein IA is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 520 cm−1±5 cm−1, and IB is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 480 cm−1±5 cm−1;
- and based on mass of the negative electrode active material, a mass percentage of the silicon-carbon composite material is 5% to 30%.
An electronic apparatus, comprising the secondary battery wherein secondary battery comprises a positive electrode plate, a separator, a negative electrode plate, and an electrolyte, wherein the negative electrode plate comprises a negative electrode current collector and a negative electrode material layer located on at least one surface of the negative electrode current collector, the negative electrode material layer comprises a negative electrode active material, and the negative electrode active material comprises graphite and a silicon-carbon composite material;
- wherein the silicon-carbon composite material comprises a carbon matrix and nano-silicon particles, wherein the nano-silicon particles are located within pores of the carbon matrix, and a Raman spectrum of the silicon-carbon composite material satisfies IA≥1.2IB, wherein IA is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 520 cm−1±5 cm−1, and IB is a peak intensity of the Raman spectrum of the silicon-carbon composite material at 480 cm−1±5 cm−1;
- and based on mass of the negative electrode active material, a mass percentage of the silicon-carbon composite material is 5% to 30%.
Dependencies are inferred from the claim text.