Polysilicon rod and method for manufacturing polysilicon rod

Abstract

A method for manufacturing a single crystal silicon comprises: manufacturing a polysilicon rod or polysilicon rods; selecting a representative polysilicon rod from the polysilicon rod or the polysilicon rods; checking whether in an area that does not include a seed core and that is within ⅔ of a radius of the representative polysilicon rod from the center of a cross section of the representative polysilicon rod, the cross section being along an arbitrary radius direction, average grain boundary characteristics of the representative polysilicon rod have following boundary features; a coincidence grain boundary ratio that exceeds 20%, a grain boundary length that exceeds 550 mm/mm2, and a random grain boundary length that does not exceed 800 mm/mm2; and manufacturing single crystal silicon using the rest of the manufactured polysilicon rod or the rest of the manufactured polysilicon rods as a raw material or raw materials using a Floating Zone (FZ) method when the representative polysilicon rod has the above boundary features.

Dependencies are inferred from the claim text.