Multi Level Memory Technology
Reno, NV, US· latest recorded location
Multi Level Memory Technology is named on 20 US grants and 5 published applications in this corpus. Its most frequent classification is G11C (Static stores).
- Granted patents
- 20
- Published applications
- 5
- Inventors
- 3
- Granted in 2026 so far
- 0
- Most recent grant
- 5 Jul 2005
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2001 | 3 | 0 |
| 2002 | 4 | 2 |
| 2003 | 6 | 3 |
| 2004 | 3 | 0 |
| 2005 | 4 | 0 |
By publication year.
Technology areas
Share of 25 documents
Recent patents
- Erasing storage nodes in a bi-directional nonvolatile memory cell5 Jul 2005US 6,914,820 B1
- Bit line reference circuits for binary and multiple-bit-per-cell memories14 Jun 2005US 6,906,951 B2
- Parallel programming of multiple-bit-per-cell memory cells on a continuous word line19 Apr 2005US 6,882,567 B1
- Refresh operations that change address mappings in a non-volatile memory15 Feb 2005US 6,856,568 B1
- Accessing individual storage nodes in a bi-directional nonvolatile memory cell30 Nov 2004US 6,826,084 B1
- Bi-directional floating gate nonvolatile memory6 Nov 2003US 2003/0206440 A1
- Non-volatile memory operations that change a mapping between physical and logical addresses when restoring data17 Jul 2003US 2003/0133348 A1
- Bit line reference circuits for binary and multiple-bit-per-cell memories6 Mar 2003US 2003/0043621 A1
- Contactless flash memory with buried diffusion bit/virtual ground lines5 Dec 2002US 2002/0181312 A1
- Dynamic refresh that changes the physical storage locations of data in flash memory17 Oct 2002US 2002/0149986 A1
Most cited
By later US patents
- Read and write operations using constant row line voltage and variable column line load268US 6,259,627 B12001
- Data management for multi-bit-per-cell memories235US 6,532,556 B12003
- High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations183US 6,278,633 B12001
- Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell138US 6,466,476 B12002
- Multi-bit-cell non-volatile memory with maximized data capacity127US 6,363,008 B12002