Exagan
Grenoble, FR· latest recorded location
Exagan is named on 6 US grants and 15 published applications in this corpus. Its most frequent classification is H10D (Inorganic electric semiconductor devices).
- Granted patents
- 6
- Published applications
- 15
- Inventors
- 11
- Granted in 2026 so far
- 0
- Most recent grant
- 7 Sep 2021
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2019 | 0 | 3 |
| 2020 | 3 | 3 |
| 2021 | 3 | 1 |
| 2022 | 0 | 5 |
| 2023 | 0 | 3 |
By publication year.
Technology areas
Share of 21 documents
- H10DInorganic electric semiconductor devices11
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by10
- H03KPulse technique6
- G03FPhotomechanical production of textured or patterned surfaces2
- H02MApparatus for conversion between ac and ac, between ac and dc, or2
- H03FAmplifiers2
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered2
- Y02BEnergy-efficient buildings2
- H05KPrinted circuits1
Recent patents
- Half-bridge electronic device comprising two systems for minimizing dead-time between the switching operations of a high level switch and of a low level switch7 Sep 2021US 11,114,940 B2
- Power circuit switching device having a passive protection circuit24 Aug 2021US 11,101,791 B2
- Semiconductor structure comprising III-N material8 Jun 2021US 11,031,492 B2
- Integrated circuit comprising a chip formed by a high-voltage transistor and comprising a chip formed by a low-voltage transistor15 Sep 2020US 10,777,513 B2
- Integrated circuit formed from a stack of two series-connected chips2 Jun 2020US 10,672,746 B2
- Method for manufacturing a set of electronic components on the front of a semiconductor substrate21 Dec 2023US 2023/0408902 A1
- Method for producing an electronic component assembly on the front face of a semi-conductor wafer23 Nov 2023US 2023/0378085 A1
- Transistor with interdigit electrodes, comprising a gate terminal connected by a plurality of vertical vias to the gate electrodes10 Aug 2023US 2023/0253401 A1
- Electronic device provided with a stack of two high electron mobility transistors arranged in a bridge half-arm10 Nov 2022US 2022/0359714 A1
- Bidirectional device provided with a stack of two high electron mobility transistors connected head-to-tail20 Oct 2022US 2022/0336651 A1
Most cited
By later US patents
- Power circuit switching device having a passive protection circuit4US 11,101,791 B22021
- Integrated circuit comprising a chip formed by a high-voltage transistor and comprising a chip formed by a low-voltage transistor1US 10,777,513 B22020
- Half-bridge electronic device comprising two systems for minimizing dead-time between the switching operations of a high level switch and of a low level switch1US 11,114,940 B22021