Semiconductor structure comprising III-N material

A semiconductor structure including III-N materials, comprising:

• a support substrate;
• a main layer made of III-N material, the main layer having a first section disposed on the support substrate and a second section disposed over the first section;
• an interlayer made of III-N material disposed between the first section and the second section for compressing the second section of the main layer, wherein the interlayer comprises:
• a lower layer disposed on the first section of the main layer;
• and
• an upper layer disposed on and in contact with the lower layer formed by a superlattice, wherein the lower layer consists essentially of a homogeneous layer or a superlattice which is different from the superlattice constituting the upper layer, having a dislocation density greater than that of the upper layer and a lattice parameter smaller than a lattice parameter of the material forming the upper layer, the superlattice constituting the upper layer and, where appropriate, the superlattice constituting the lower layer being formed by a repetition of a pattern comprising at least two layers of different types;
• and wherein each layer making up the pattern has a thickness of between 0.5 nm and 50 nm, the interlayer has a thickness of between 200 nm and 1000 nm, and the upper layer comprises a p-type dopant of carbon, iron or magnesium in a concentration of between 5×1018 and 5x1019 at/cm3 to make the layer resistive.