Efficient Power Conversion Corporation
El Segundo, CA, US· latest recorded location
Efficient Power Conversion Corporation is named on 68 US grants and 80 published applications in this corpus. Its most frequent classification is H10D (Inorganic electric semiconductor devices).
- Granted patents
- 68
- Published applications
- 80
- Inventors
- 42
- Granted in 2026 so far
- 2
- Most recent grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2010 | 0 | 6 |
| 2011 | 0 | 0 |
| 2012 | 0 | 3 |
| 2013 | 4 | 2 |
| 2014 | 4 | 1 |
| 2015 | 5 | 9 |
| 2016 | 3 | 4 |
| 2017 | 6 | 6 |
| 2018 | 4 | 6 |
| 2019 | 6 | 6 |
| 2020 | 13 | 13 |
| 2021 | 8 | 2 |
| 2022 | 1 | 1 |
| 2023 | 2 | 7 |
| 2024 | 2 | 10 |
| 2025 | 8 | 2 |
| 2026 | 2 | 2 |
By publication year. 2026 runs to 8 Oct.
Technology areas
Share of 148 documents
- H10DInorganic electric semiconductor devices84
- H03KPulse technique53
- H02MApparatus for conversion between ac and ac, between ac and dc, or25
- H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by25
- H10PGeneric processes or apparatus for the manufacture or treatment of devices covered18
- Y02BEnergy-efficient buildings16
- H02JPower supply and charging12
- H03FAmplifiers11
- G05FSystems for regulating electric or magnetic variables8
- H05KPrinted circuits6
Recent patents
- GaN device with uniform electric field28 Jul 2026US 12,696,514 B2
- Bidirectional GaN FET with single gate16 Jun 2026US 12,658,915 B2
- Integrated circuit for gate overvoltage protection of power devices4 Nov 2025US 12,463,632 B2
- Synchronizing turn-on/turn-off times of parallel power FETs4 Nov 2025US 12,463,634 B2
- Driver circuit for GaN FET solid state relay4 Nov 2025US 12,463,638 B2
- Gan hemt with reduced threshold shifting30 Apr 2026US 2026/0122952 A1
- Multiphase n-channel high-side switch for gan integrated circuits5 Mar 2026US 2026/0066891 A1
- Gan hemt with low threshold voltage shift using a hole injector/collector4 Dec 2025US 2025/0374643 A1
- Gan device with hole elimination centers28 Aug 2025US 2025/0275216 A1
- Gan transistor having multi-thickness front barrier12 Dec 2024US 2024/0413205 A1
Most cited
By later US patents
- Enhancement mode GaN HEMT device with gate spacer and method for fabricating the same27US 8,823,012 B22014
- Enhancement mode GaN HEMT device and method for fabricating the same26US 8,404,508 B22013
- Dopant diffusion modulation in GaN buffer layers25US 8,431,960 B22013
- Back diffusion suppression structures15US 8,436,398 B22013
- Enhancement mode GaN HEMT device13US 8,890,168 B22014